dual transistor component JSCJ UMD12N-HAF featuring NPN and PNP transistors in compact SOT-363 package

Key Attributes
Model Number: UMD12N-HAF
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
47kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMD12N-HAF
Package:
SOT-363
Product Description

Product Overview

The UMD12N is a dual digital transistor package containing both a DTC144E (NPN) and a DTA144E (PNP) chip. Designed for automatic mounting with SOT-363 machines, its independent transistor elements prevent interference. This integration offers significant cost and area savings for applications requiring both NPN and PNP digital transistors.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Marking: D12
  • Package: SOT-363

Technical Specifications

ParameterSymbolUMD12N (NPN) TR1UnitUMD12N (PNP) TR2UnitConditions
Absolute Maximum Ratings
Supply voltageVCC50V-50V
Input voltageVIN-10~+40V-40~+10V
Output currentIO (MAX)100mA-100mA
Power dissipationPd150mW150mW
Operation Junction and Storage Temperature RangeTJ, Tstg -55~+150 -55~+150
Electrical Characteristics
Input voltage (off)VI(off)0.5V-0.5VVCC=5V, IO=100A (TR1); VCC=-5V, IO=-100A (TR2)
Input voltage (on)VI(on)3V-3VVO=0.3V, IO=2mA (TR1); VO=-0.3V, IO=-2mA (TR2)
Output voltage (on)VO(on)0.1 ~ 0.3V-0.1 ~ -0.3VIO/II=10mA/0.5mA (TR1); IO/II=-10mA/-0.5mA (TR2)
Input currentII0.18mA-0.18mAVI=5V (TR1); VI=-5V (TR2)
Output current (off)IO(off)0.5A-0.5AVCC=50V, VI=0 (TR1); VCC=-50V, VI=0 (TR2)
DC current gainGI6868VO=5V, IO=5mA (TR1); VO=-5V, IO=-5mA (TR2)
Input resistanceR132.9 ~ 61.1K32.9 ~ 61.1K
Resistance ratioR2/R10.8 ~ 1.20.8 ~ 1.2
Transition frequencyfT250MHz250MHzVCE=10V, IE=-5mA, f=100MHz (TR1); VCE=-10V, IE=5mA, f=100MHz (TR2)

2410121530_JSCJ-UMD12N-HAF_C2961230.pdf

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