Schottky Barrier Diode Plastic Encapsulate JSCJ B5819W SL for High Frequency and Polarity Protection
Key Attributes
Model Number:
B5819W SL
Product Custom Attributes
Reverse Leakage Current (Ir):
9A
Non-Repetitive Peak Forward Surge Current:
9A
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
600mV@1A
Current - Rectified:
1A
Mfr. Part #:
B5819W SL
Package:
SOD-123
Product Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes B5817W-5819W SCHOTTKY BARRIER DIODE
Schottky Barrier Diodes designed for low voltage, high frequency inverters, free wheeling, and polarity protection applications. Available in SOD-123 package.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Material: Plastic-Encapsulate
- Color: Green molding compound device (if marked with solid dot)
Technical Specifications
| Parameter | Symbol | B5817W | B5818W | B5819W | Unit | |
| Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 | ||||||
| Non-Repetitive Peak Reverse Voltage | VRM | 20 | 30 | 40 | V | |
| Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | VRRM VRWM VR | 20 30 40 | 20 30 40 | 20 30 40 | V | |
| RMS Reverse Voltage | VR(RMS) | 14 | 21 | 28 | V | |
| Average Rectified Output Current | IO | 1 | 1 | 1 | A | |
| Repetitive Peak Forward Current | IFRM | 1.5 | 1.5 | 1.5 | A | |
| Power Dissipation | Pd | 500 | 500 | 500 | mW | |
| Thermal Resistance Junction to Ambient | RJA | 200 | 200 | 200 | /W | |
| Non-repetitive Peak Forward Surge Current @t=8.3ms | IFSM | 9 | 9 | 9 | A | |
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| Reverse breakdown voltage | V(BR) (IR= 1mA) | 20 | 30 | 40 | V | |
| Reverse voltage leakage current | IR (VR=20V B5817W, VR=30V B5818W, VR=40V B5819W) | 1 | 1 | 1 | mA | |
| Forward voltage | VF (IF=1A, IF=3A) | 0.45 / 0.75 | 0.55 / 0.875 | 0.6 / 0.9 | V | |
| (IF=1A) | (IF=3A) | (IF=1A) | (IF=3A) | (IF=1A) | (IF=3A) | |
| Diode capacitance | CD (VR=4V, f=1MHz) | 120 | 120 | 120 | pF | |
| Storage Temperature | TSTG | -55~+150 | -55~+150 | -55~+150 | ||
| Junction temperature | TJ | 125 | 125 | 125 | ||
2410121257_JSCJ-B5819W-SL_C8598.pdf
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