Surface Mount Zener Diode Jingdao Microelectronics BZT52C6V8 with 500mW Power and Compact SOD123 Package
Key Attributes
Model Number:
BZT52C6V8
Product Custom Attributes
Impedance(Zzt):
15Ω
Diode Configuration:
Independent
Zener Voltage(Range):
6.4V~7.2V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
6.8V
Impedance(Zzk):
80Ω
Mfr. Part #:
BZT52C6V8
Package:
SOD-123
Product Description
Product Overview
Surface Mount Zener Diodes with a total power dissipation of Max. 500mW and a wide zener reverse voltage range from 2.0V to 39V. These diodes feature a small plastic package (SOD-123) suitable for surface-mounted designs, offering reliable performance and ease of integration.
Product Attributes
- Brand: Jingdao Microelectronics
- Origin: Shandong, China
- Package Type: SOD-123
Technical Specifications
| Type | Zener Voltage Range (VZ at IZT) Nom. (V) | Zener Voltage Range (VZ at IZT) Min. (V) | Zener Voltage Range (VZ at IZT) Max. (V) | Max. Zener Current (IZT) (mA) | Max. Zener Impedance (ZZT at IZT) () | Reverse Current (IR at VR) Max. (A) | Forward Voltage (VF at IF = 10 mA) (V) | Typical Temperature Coefficient @IZTC (mV/C) |
|---|---|---|---|---|---|---|---|---|
| BZT52C2V0 | 2.0 | 2.0 | 2.09 | 600 | 100 | 150 | 0.9 | -3.5 |
| BZT52C2V4 | 2.4 | 2.4 | 2.6 | 600 | 100 | 50 | 0.9 | -3.5 |
| BZT52C2V7 | 2.7 | 2.7 | 2.9 | 600 | 100 | 20 | 0.9 | -3.5 |
| BZT52C3V0 | 3.0 | 3.0 | 3.2 | 600 | 95 | 10 | 0.9 | -3.5 |
| BZT52C3V3 | 3.3 | 3.3 | 3.5 | 600 | 95 | 5.0 | 0.9 | -3.5 |
| BZT52C3V6 | 3.6 | 3.6 | 3.8 | 600 | 90 | 5.0 | 0.9 | -3.5 |
| BZT52C3V9 | 3.9 | 3.9 | 4.1 | 600 | 90 | 3.0 | 0.9 | -3.5 |
| BZT52C4V3 | 4.3 | 4.3 | 4.6 | 600 | 90 | 3.0 | 0.9 | -3.5 |
| BZT52C4V7 | 4.7 | 4.7 | 5.0 | 500 | 80 | 3.0 | 0.9 | -3.5 |
| BZT52C5V1 | 5.1 | 5.1 | 5.4 | 480 | 60 | 2.0 | 0.9 | -2.7 |
| BZT52C5V6 | 5.6 | 5.6 | 6.0 | 400 | 40 | 1.0 | 0.9 | -2 |
| BZT52C6V2 | 6.2 | 6.2 | 6.6 | 150 | 15 | 3.0 | 0.9 | 0.4 |
| BZT52C6V8 | 6.8 | 6.8 | 7.2 | 80 | 15 | 2.0 | 0.9 | 1.2 |
| BZT52C7V5 | 7.5 | 7.5 | 7.9 | 80 | 15 | 1.0 | 0.9 | 2.5 |
| BZT52C8V2 | 8.2 | 8.2 | 8.7 | 100 | 15 | 0.7 | 0.9 | 3.2 |
| BZT52C9V1 | 9.1 | 9.1 | 9.6 | 150 | 20 | 0.5 | 0.9 | 3.8 |
| BZT52C10 | 10 | 10 | 10.6 | 150 | 20 | 0.2 | 0.9 | 4.5 |
| BZT52C11 | 11 | 11 | 11.6 | 150 | 25 | 0.1 | 0.9 | 5.4 |
| BZT52C12 | 12 | 12 | 12.7 | 150 | 30 | 0.1 | 0.9 | 6.0 |
| BZT52C13 | 13 | 13 | 14.1 | 170 | 30 | 0.1 | 0.9 | 7.0 |
| BZT52C15 | 15 | 15 | 15.6 | 200 | 40 | 0.1 | 0.9 | 9.2 |
| BZT52C16 | 16 | 16 | 17.1 | 200 | 45 | 0.1 | 0.9 | 10.4 |
| BZT52C18 | 18 | 18 | 19.1 | 225 | 55 | 0.1 | 0.9 | 12.4 |
| BZT52C20 | 20 | 20 | 21.2 | 225 | 55 | 0.1 | 0.9 | 14.4 |
| BZT52C22 | 22 | 22 | 23.3 | 250 | 70 | 0.1 | 0.9 | 16.4 |
| BZT52C24 | 24 | 24 | 25.6 | 250 | 80 | 0.1 | 0.9 | 18.4 |
| BZT52C27 | 27 | 27 | 28.9 | 300 | 80 | 0.1 | 0.9 | 21.4 |
| BZT52C30 | 30 | 30 | 32.0 | 300 | 90 | 0.1 | 0.9 | 24.4 |
| BZT52C33 | 33 | 33 | 35.0 | 325 | 130 | 0.1 | 0.9 | 27.4 |
| BZT52C36 | 36 | 36 | 38.0 | 350 | 130 | 0.1 | 0.9 | 30.4 |
| BZT52C39 | 39 | 39 | 41.0 | 350 | 130 | 0.1 | 0.9 | 33.4 |
2304140030_Jingdao-Microelectronics-BZT52C6V8_C353510.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
