Plastic encapsulated switching diode JSCJ BAV99W designed for fast switching and circuit performance
Key Attributes
Model Number:
BAV99W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
2.5uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
1 Pair Series Connection
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
BAV99W
Package:
SOT-323-3
Product Description
BAV99W Switching Diode
The BAV99W is a high-speed switching diode designed for demanding applications. Its series connection offers advantages in specific circuit designs, making it suitable for fast switching operations.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Material: Plastic-Encapsulated
- Marking: KJG
- Molding Compound: Green (indicated by solid dot)
Technical Specifications
| Parameter | Symbol | Conditions | Limit | Unit | |
|---|---|---|---|---|---|
| Reverse Voltage | VR | @Ta=25 | 75 | V | |
| Forward Current | IF | @Ta=25 | 150 | mA | |
| Forward Surge Current (Non-Repetitive Peak) | IFSM | @t=8.3ms | 2.0 | A | |
| Power Dissipation | PD | @Ta=25 | 200 | mW | |
| Thermal Resistance Junction to Ambient | RJA | 625 | /W | ||
| Junction Temperature | TJ | 150 | |||
| Storage Temperature Range | TSTG | -55~+150 | |||
| Reverse breakdown voltage | V(BR) | IR= 100A | 75 | V | |
| Reverse voltage leakage current | IR1 | VR=75V | A | ||
| Reverse voltage leakage current | IR2 | VR=25V | 25 | nA | |
| Forward voltage | VF | IF=1mA | 715 | mV | |
| Forward voltage | VF | IF=10mA | 855 | mV | |
| Forward voltage | VF | IF=50mA | 1000 | mV | |
| Forward voltage | VF | IF=150mA | 1250 | mV | |
| Diode capacitance | CD | VR=0 f=1MHz | 2 | pF | |
| Reverse recovery time | trr | IF=IR=10mA Irr=0.1IR,RL=100 | 4 | ns |
1809211023_JSCJ-BAV99W_C26216.pdf
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