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quality Plastic Encapsulated Schottky Rectifier Diode JSCJ SS36 with 60 Volt Repetitive Peak Reverse Voltage factory
quality Plastic Encapsulated Schottky Rectifier Diode JSCJ SS36 with 60 Volt Repetitive Peak Reverse Voltage factory

Plastic Encapsulated Schottky Rectifier Diode JSCJ SS36 with 60 Volt Repetitive Peak Reverse Voltage

Key Attributes
Model Number: SS36
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
70A
Reverse Leakage Current (Ir):
500uA@60V
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
700mV@3A
Current - Rectified:
3A
Mfr. Part #:
SS36
Package:
SMAG
Product Description

Product Overview

The SS3 series Schottky Rectifier Diodes are designed for high surge current capability, offering efficient rectification with low forward voltage. Available in voltage ratings from 20V to 200V, these diodes are suitable for various rectifier applications where high performance and reliability are required. They are packaged in plastic-encapsulated diodes for surface mounting.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: CHINA
  • Material: Plastic-Encapsulate Diodes
  • Polarity: Color band denotes cathode
  • Marking: SS3X (where X denotes voltage rating)
  • Certifications: Not specified in the provided text.

Technical Specifications

Item Symbol Unit Test Conditions SS32 SS34 SS36 SS38 SS310 SS315 SS320
Repetitive Peak Reverse Voltage VRRM V - 20 40 60 80 100 150 200
Average Forward Current IF(AV) A Tc=75, Resistive or Inductive Load, P.C.B. Mounted on 0.2"x0.2"(5mmx5mm)Copper Pad Areas 3.0 3.0 3.0 3.0 3.0 3.0 3.0
Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave, 1 cycle, Ta=25 70 70 70 70 70 70 70
Junction Temperature TJ - -55~+125 -55~+125 -55~+125 -55~+125 -55~+125 -55~+125 -55~+125
Storage Temperature TSTG - -55 ~ +150 -55 ~ +150 -55 ~ +150 -55 ~ +150 -55 ~ +150 -55 ~ +150 -55 ~ +150
Peak Forward Voltage VF V IF =3.0A, Tj=25 0.55 0.70 0.85 0.95 0.95 0.95 0.95
Peak Reverse Current IRRM1 mA VRM=VRRM, Ta =25 0.1 0.1 0.1 0.1 0.1 0.1 0.1
Peak Reverse Current IRRM2 mA VRM=VRRM, Ta =100 5.0 5.0 5.0 5.0 5.0 5.0 5.0
Thermal Resistance(Typical) - Junction to Ambient RJ-A /W P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas 75 75 75 75 75 75 75
Thermal Resistance(Typical) - Junction to Lead RJ-L /W P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas 17 17 17 17 17 17 17

Typical Characteristics

Figure Description Details
FIG.1 FORWARD CURRENT DERATING CURVE IO(A) vs TL()
FIG.2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT IFSM(A) vs Number of Cycles (8.3ms Single Half Sine Wave JEDEC Method)
FIG.3 TYPICAL FORWARD CHARACTERISTICS VF(V) vs IF(A) (Pulse width=300us, 1% Duty Cycle, Tj=25)
FIG.4 TYPICAL REVERSE CHARACTERISTICS IR(mA) vs Voltage(%) (Tj=25, Tj=75, Tj=125)

Applications

  • Rectifier
  • General Purpose

Features

  • 3A Average Forward Current
  • 20V-200V Repetitive Peak Reverse Voltage
  • High surge current capability

Note: JSCJ reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein.

Website: www.jscj-elec.com


2410121738_JSCJ-SS36_C2923967.pdf

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