Super Fast Recovery Rectifier Diode JSCJ ES1J Designed for High Surge Current and Switching Circuits

Key Attributes
Model Number: ES1J
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
5uA@600V
Reverse Recovery Time (trr):
35ns
Voltage - DC Reverse (Vr) (Max):
600V
Diode Configuration:
Independent
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.7V@1A
Current - Rectified:
1A
Mfr. Part #:
ES1J
Package:
SMAG
Product Description

Product Overview

The ES1A through ES1J series are super fast recovery rectifier diodes designed for high-speed switching applications. They offer high surge current capability and are suitable for general rectifier use.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Marking: ES1X X : From A To J
  • Polarity: Color band denotes cathode
  • Material: Plastic-Encapsulate Diodes
  • Origin: China (implied by manufacturer location)

Technical Specifications

ItemSymbolUnitTest ConditionES1AES1BES1CES1DES1EES1GES1HES1J
Repetitive Peak Reverse VoltageVRRMV50100150200280350420600
Average Forward CurrentIF(AV)A60Hz Half-sine wave Resistance loadT L=751.0
Surge(Non-repetitive)Forward CurrentIFSMA60Hz Half-sine wave 1 cycleTa=2530
Maximum RMS VoltageVRMSV3570105140210280350420
Peak Forward VoltageVFVIF =1.0A0.951.25
Maximum reverse recovery timetrrnsIF=0.5A,IR=1.0A,Irr A VRM=VRRM35
Peak Reverse CurrentIRRM2AVRM=VRRM Ta =25100150200300400500600750
Peak Reverse CurrentIRRM1AVRM=VRRM Ta =100100150200300400500600750
Thermal Resistance(Typical)R J-A/WBetween junction and ambient85
Thermal Resistance(Typical)R J-L/WBetween junction and terminal35
Operation Junction and Storage Temperature RangeTJ,TSTG -55 ~ +150

2410121810_JSCJ-ES1J_C2923909.pdf

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