High speed switching diode JSCJ UMN1N multiple matched diodes in small green molding compound package
Key Attributes
Model Number:
UMN1N
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
250mA
Reverse Leakage Current (Ir):
100nA@70V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
80V
Diode Configuration:
2 Pair Common Cathode
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
900mV@5mA
Current - Rectified:
25mA
Mfr. Part #:
UMN1N
Package:
SOT-353
Product Description
Product Overview
The UMN1N is a switching diode featuring multiple diodes in a single small surface mount package with matched diode characteristics. It is designed for high-speed switching applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: N1
- Package: SOT-353
- Color: Green molding compound device (if solid dot is present)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Continuous Reverse Voltage | VR | 80 | V | |||
| Continuous Forward Current | IO | 25 | mA | |||
| Peak Forward Current | IFM | 80 | mA | |||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction To Ambient | RJA | 833 | /W | |||
| Operation Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
| Reverse Voltage (Breakdown) | V(BR) | IR=100A | 80 | V | ||
| Reverse Current | IR | VR=70V | 0.1 | A | ||
| Forward Voltage | VF | IF=5mA | 0.9 | V | ||
| Total Capacitance | Ctot | VR=6V,f=1MHz | 3.5 | pF | ||
| Reverse Recovery Time | trr | IF= IR=5mA, VR=6V, RL=50 | 4 | ns | ||
| Non-repetitive Peak Forward Surge Current | IFSM | @t= 8.3ms | 0.25 | A |
2410121738_JSCJ-UMN1N_C2910246.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
