Switching Power Supply MOSFET Jingdao Microelectronics D5N50 with 5A Continuous Drain Current Rating
Key Attributes
Model Number:
D5N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
RDS(on):
1.6Ω@10V,2.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Output Capacitance(Coss):
74pF
Pd - Power Dissipation:
54W
Input Capacitance(Ciss):
560pF@25V
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
D5N50
Package:
TO-252W
Product Description
Product Overview
The D5N50 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin:
- Case Material: Green molding compound, UL flammability classification 94V-0,Halogen-free.
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 500 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 5 | A | Tc=25 |
| Continuous Drain Current | ID | 3.2 | A | Tc=100 |
| Pulsed Drain Current | IDM | 20 | A | Note 2 |
| Avalanche Energy Single Pulsed | EAS | 54 | mJ | Note 3 |
| Power Dissipation | PD | 310 | W | |
| Peak Diode Recovery dv/dt | dv/dt | 2.1 | V/ns | Note 4 |
| Operation Junction and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| THERMAL DATA | ||||
| Junction to Ambient | RthJA | 63 | °C/W | |
| Junction to Case | RthJC | 2.5 | °C/W | |
| OFF CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS=0V,ID=250uA |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=-30V,VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=500V,VGS=0V |
| ON CHARACTERISTICS | ||||
| Static Drain-Source On-State Resistance | RDS(ON) | 1.6 | Ω | VGS=10V,ID=2.5A |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250uA |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | CISS | 560 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 74 | pF | |
| Reverse Transfer Capacitance | CRSS | 13 | pF | |
| SWITCHING CHARACTERISTICS | ||||
| Total Gate Charge | QG | 14 | nC | VDS=400V,VGS=10V, ID=10A,IG=1mA (NOTE1,2) |
| Gate-Drain Charge | QGD | 4.0 | nC | |
| Gate-Source Charge | QGS | 8.0 | nC | |
| Turn-On Delay Time | tD(ON) | 36 | ns | VDS=100V,VGS=10V, ID=5A,RG=25Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 16 | ns | |
| Turn-Off Delay Time | tD(OFF) | 10 | ns | |
| Turn-Off Fall Time | tF | 5.0 | ns | |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||
| Maximum Body-Diode Continuous Current | IS | 5 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 20 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=5A,VGS=0V |
| Reverse Recovery Time | trr | 180 | ns | IS=5A,VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 1.9 | uC | IS=5A,VGS=0V, di/dt=100A/us |
2308251144_Jingdao-Microelectronics-D5N50_C7528256.pdf
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