Jingdao Microelectronics PM3401B P Channel MOSFET with High Current Handling in Surface Mount Package
Key Attributes
Model Number:
PM3401B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
59mΩ@10V,4.2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
600mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Output Capacitance(Coss):
105pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
880pF@15V
Gate Charge(Qg):
8.5nC@4.5V
Mfr. Part #:
PM3401B
Package:
SOT-23
Product Description
Product Overview
The PM3401B is a P-CHANNEL MOSFET from Jingdao Microelectronics, designed for high power and current handling capabilities in a surface mount SOT-23 package. It features low on-resistance and is suitable for load switching, PWM applications, and power management.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD ()
- Package: SOT-23
- Lead Free: Yes
Technical Specifications
| Parameter | Symbol | Limit | Units | Test Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | ±12 | V | |
| Pulsed Drain Current (Note 1) | IDM | -4.2 | A | |
| Power Dissipation | PD | 1.2 | W | TA=25°C |
| Continuous Drain Current | ID | -4.2 | A | TA=25°C |
| Operation Junction Temperature and Storage Temperature | Tj,Tstg | -55 ~ +150 | °C | |
| Electrical Characteristics (TA=25°C, unless otherwise specified) | ||||
| Off Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0V,ID = -250uA |
| Gate-Source Leakage Current | IGSS | -1.0 | uA | VGS = -12V,VDS = 0V |
| Drain-Source Leakage Current | IDSS | -100 | nA | VDS = -24V,VGS = 0V |
| On Characteristics (Note 2) | ||||
| Static Drain-Source On-State Resistance | RDS(on) | 59 (Typ), 74 (Max) | mΩ | VGS = -10V,ID = -4.2A |
| Static Drain-Source On-State Resistance | RDS(on) | 74 (Max) | mΩ | VGS = -4.5V,ID = -4.2A |
| Static Drain-Source On-State Resistance | RDS(on) | 100 (Max) | mΩ | VGS = -2.5V,ID = -2A |
| Gate Threshold Voltage | VGS(th) | -0.6 (Typ) | V | VDS = VGS,ID = -250uA |
| Dynamic Characteristics (Note 3) | ||||
| Input Capacitance | CISS | 880 (Typ) | pF | VDS = -15V, VGS = 0V, F =1.0MHz |
| Output Capacitance | COSS | 105 (Typ) | pF | VDS = -15V, VGS = 0V, F =1.0MHz |
| Reverse Transfer Capacitance | CRSS | 65 (Typ) | pF | VDS = -15V, VGS = 0V, F =1.0MHz |
| Switching Characteristics (Note 3) | ||||
| Total Gate Charge | QG | 30 (Typ) | nC | VDS = -15V,VGS = -4.5V, ID = -4.2A |
| Gate-Drain Charge | QGD | 8.5 (Typ) | nC | VDS = -15V,VGS = -4.5V, ID = -4.2A |
| Gate-Source Charge | QGS | 2.7 (Typ) | nC | VDS = -15V,VGS = -4.5V, ID = -4.2A |
| Turn-On Delay Time | tD(on) | 7 (Typ) | ns | VDS = -15V,VGS = -10V, ID = -4.2A,RGEN = 6Ω |
| Turn-On Rise Time | tR | 12 (Typ) | ns | VDS = -15V,VGS = -10V, ID = -4.2A,RGEN = 6Ω |
| Turn-Off Delay Time | tD(off) | 3.6 (Typ) | ns | VDS = -15V,VGS = -10V, ID = -4.2A,RGEN = 6Ω |
| Turn-Off Fall Time | tF | 140 (Typ) | ns | VDS = -15V,VGS = -10V, ID = -4.2A,RGEN = 6Ω |
| Drain-Source Diode Characteristics And Maximum Ratings | ||||
| Drain-Source Diode Forward Voltage (Note 2) | VSD | -1.3 (Max) | V | IS = -1.A,VGS = 0V |
2308251144_Jingdao-Microelectronics-PM3401B_C7528268.pdf
Related Products
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
