86--136 6733 2386
quality Power Management Solutions Using Jingdao Microelectronics NM3400 N Channel MOSFET with SOT 23 Package factory
quality Power Management Solutions Using Jingdao Microelectronics NM3400 N Channel MOSFET with SOT 23 Package factory

Power Management Solutions Using Jingdao Microelectronics NM3400 N Channel MOSFET with SOT 23 Package

Key Attributes
Model Number: NM3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
55mΩ@2.5V,3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
600mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
71pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
630pF@15V
Gate Charge(Qg):
17.5nC@10V
Mfr. Part #:
NM3400
Package:
SOT-23
Product Description

NM3400 N-Channel MOSFET

The NM3400 is an N-Channel MOSFET from Jingdao Microelectronics, designed for high-speed switching and power management applications. Its high-density cell design and Trench Power LV MOSFET Technology contribute to low RDS(ON) values, making it suitable for load switching and PWM applications. The device comes in a SOT-23 package.

Product Attributes

  • Brand: Jingdao Microelectronics co.LTD
  • Origin: Shandong, China
  • Package: SOT-23

Technical Specifications

Parameter Symbol Conditions Min Typ Max Unit
Absolute Maximum Ratings
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current ID TA=25°C 5.8 A
Pulsed Drain Current IDM 23 A
Power Dissipation PD TA=25°C 1.2 W
Operation Junction Temperature and Storage Temperature TJ, stg -55 +150 °C
Thermal Resistance, Junction to Case(B) RθJA 100 °Ω/W
Electrical Characteristics (TA=25°C, unless otherwise specified)
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 V
Gate-Source Leakage Current IGSS VDS = 0V, VGS = ±20V ±100 nA
Drain-Source Leakage Current IDSS VDS = 30V, VGS = 0V 1 µA
On Characteristics
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.6 1.5 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 4A 23 mΩ
VGS = 4.5V, ID = 4A 32 35 mΩ
VGS = 2.5V, ID = 3A 38 55 mΩ
Dynamic Characteristics
Input Capacitance Ciss VDS = 15V, VGS = 0V, f = 1.0MHz 630 pF
Output Capacitance Coss 71 pF
Reverse Transfer Capacitance Crss 55 pF
Total Gate Charge Qg VDS = 15V, VGS = 10V, ID = 5.8A 17.5 nC
Gate-Drain Charge Qgd 2.1 nC
Gate-Source Charge Qgs 16.2 nC
Turn-On Delay Time tD(on) VDS = 15V, VGS = 10V, ID=5.8A,RGEN=3Ω 28.2 ns
Turn-On Rise Time tr 26 ns
Turn-Off Delay Time tD(off) 1.2 ns
Turn-Off Fall Time tf 4.4 ns
Drain-Source Diode Forward Voltage VSD IS = 5.8A, VGS = 0V 1.2 V

2410010301_Jingdao-Microelectronics-NM3400_C5155290.pdf

Related Products
quality Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor factory
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
quality power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching factory
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
quality Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage factory
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
quality Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control factory
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.