Switching MOSFET Jingdao Microelectronics F16N65L designed for in power supplies and adaptor circuits
Key Attributes
Model Number:
F16N65L
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
16A
RDS(on):
520mΩ@10V,8A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.4pF
Output Capacitance(Coss):
220pF
Pd - Power Dissipation:
61W
Input Capacitance(Ciss):
2.66nF@25V
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
F16N65L
Package:
TO-220F-3L
Product Description
F16N65L - N-CHANNEL POWER MOSFET
The F16N65L is a high voltage power MOSFET designed for high-speed switching applications. It offers superior characteristics including fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is ideal for use in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics
- Origin: China
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 650 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 16 | A | Tc=25°C |
| Continuous Drain Current | ID | 11.3 | A | Tc=100°C |
| Pulsed Drain Current | IDM | 64 | A | Note 2 |
| Avalanche Energy Single Pulsed | EAS | 780 | mJ | Note 3 |
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | Note 4 |
| Power Dissipation | PD | 62.5 | W | |
| Junction to Ambient Thermal Resistance | RthJA | 2.04 | °C/W | |
| Junction to Case Thermal Resistance | RthJC | 0.48 | °C/W | |
| Operation Junction and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=0.25mA |
| Gate-Source Leakage Current | IGSS | ±1 | µA | VGS=±30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=650V, VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 4.0 | V | VDS=VGS, ID=0.25mA |
| Static Drain-Source On-State Resistance | RDS(ON) | 0.52 | Ω | VGS=10V, ID=8.0A |
| Input Capacitance | CISS | 2660 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 220 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 10.4 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Total Gate Charge | QG | 72 | nC | VDS=520V, VGS=10V, ID=16A |
| Gate-Drain Charge | QGD | 26 | nC | VDS=520V, VGS=10V, ID=16A |
| Gate-Source Charge | QGS | 12 | nC | VDS=520V, VGS=10V, ID=16A |
| Turn-On Delay Time | tD(ON) | 12 | ns | VDS=325V, VGS=10V, ID=16A, RG=25Ω |
| Turn-On Rise Time | tR | 49 | ns | VDS=325V, VGS=10V, ID=16A, RG=25Ω |
| Turn-Off Delay Time | tD(OFF) | 40 | ns | VDS=325V, VGS=10V, ID=16A, RG=25Ω |
| Turn-Off Fall Time | tF | 16 | ns | VDS=325V, VGS=10V, ID=16A, RG=25Ω |
| Maximum Body-Diode Continuous Current | IS | 16 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 64 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=16A, VGS=0V |
| Reverse Recovery Time | trr | 470 | ns | IS=16A, VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 12 | µC | IS=16A, VGS=0V, di/dt=100A/us |
2209091800_Jingdao-Microelectronics-F16N65L_C5157070.pdf
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