High Voltage N Channel MOSFET with Fast Switching Times Jingdao Microelectronics F4N65 Power Device
Key Attributes
Model Number:
F4N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
2.6Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Pd - Power Dissipation:
32W
Input Capacitance(Ciss):
560pF@25V
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
F4N65
Package:
ITO-220AB-3
Product Description
Product Overview
The F4N65 is a high voltage N-channel Power MOSFET from Jingdao Microelectronics, featuring advanced trench MOSFET technology. It is designed for high-speed switching applications, offering fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics
- Model: F4N65
- Package: ITO-220ABW
- Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 650 | V | TA=25C, unless otherwise specified |
| Gate-Source Voltage | VGSS | ±30 | V | TA=25C, unless otherwise specified |
| Continuous Drain Current | ID | 4 | A | TA=25C, unless otherwise specified |
| Pulsed Drain Current | IDM | 32 | A | Note 2 |
| Avalanche Energy Single Pulsed | EAS | 173 | mJ | Note 3 |
| Power Dissipation | PD | 2.1 | W | TA=25C, unless otherwise specified |
| Peak Diode Recovery dv/dt | dv/dt | 4 | V/ns | Note 4 |
| Operation Junction Temperature and Storage Temperature | TJ, stg | -55 ~ +150 | °C | |
| THERMAL DATA | ||||
| Junction to Ambient Thermal Resistance | RthJA | 63 | °C/W | Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. |
| Junction to Case Thermal Resistance | RthJC | 2.6 | °C/W | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=0.25mA |
| Gate-Source Leakage Current | IGSS | ±10 | nA | VGS=±30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=650V, VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS, ID=0.25mA |
| Static Drain-Source On-State Resistance | RDS(ON) | 2.6 | Ω | VGS=10V, ID=2.0A |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | CISS | 560 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 55 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 13 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| SWITCHING CHARACTERISTICS | ||||
| Total Gate Charge | QG | 36 | nC | VDS=520V, VGS=10V, ID=4A, IG=1mA (NOTE1,2) |
| Gate-Drain Charge | QGD | 16 | nC | VDS=520V, VGS=10V, ID=4A, IG=1mA (NOTE1,2) |
| Gate-Source Charge | QGS | 22 | nC | VDS=520V, VGS=10V, ID=4A, IG=1mA (NOTE1,2) |
| Turn-On Delay Time | tD(ON) | 4 | ns | VDS=100V, VGS=10V, ID=4A, RG=25Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 8 | ns | VDS=100V, VGS=10V, ID=4A, RG=25Ω (NOTE1,2) |
| Turn-Off Delay Time | tD(OFF) | 1.4 | ns | VDS=100V, VGS=10V, ID=4A, RG=25Ω (NOTE1,2) |
| Turn-Off Fall Time | tF | 250 | ns | VDS=100V, VGS=10V, ID=4A, RG=25Ω (NOTE1,2) |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||
| Maximum Body-Diode Continuous Current | IS | 4 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 16 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=4A, VGS=0V |
| Reverse Recovery Time | trr | 250 | ns | IS=7A, VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 4.5 | µC | IS=7A, VGS=0V, di/dt=100A/us |
2410010301_Jingdao-Microelectronics-F4N65_C2935477.pdf
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