High reliability MOSFET JingYang TNM1230N5X designed for synchronous buck converter power applications
Key Attributes
Model Number:
TNM1230N5X
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
37A
RDS(on):
12mΩ@10V,15A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
108pF
Number:
1 N-channel
Output Capacitance(Coss):
126pF
Pd - Power Dissipation:
26W
Input Capacitance(Ciss):
896pF
Gate Charge(Qg):
9.8nC@4.5V
Mfr. Part #:
TNM1230N5X
Package:
DFN-8L(3x3)
Product Description
Product Overview
The TNM1230N5X is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements, with 100% EAS guaranteed and full functional reliability.
Product Attributes
- Brand: JY Electronics (implied by website)
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate Source Voltage | VGSS | 20 | V | |||
| Drain Current (Continuous) | ID | TA=25C | 37 | A | ||
| Drain Current (Continuous) | ID | TA=100C | 24 | A | ||
| Drain Current (Pulse) | IDM | *B | 75 | A | ||
| Power Dissipation | PD | TA=25C | 26 | W | ||
| Power Dissipation | PD | TA=100C | 21 | W | ||
| Operating/Storage Temperature | TJ/TSTG | -55 | 150 | C | ||
| Single Pulse Avalanche Energy | EAS | 24.2 | mJ | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 75 | C/W | |||
| Electrical Characteristics | ||||||
| Static Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0VID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=24VVGS=0V | 1 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGSIDS=250uA | 1.0 | 2.5 | V | |
| Gate Leakage Current | IGSS | VGS=20VVDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance | RDS(on) | VGS=10VID=15A | 12 | m | ||
| Drain-Source On-state Resistance | RDS(on) | VGS=4.5VID=10A | 16.5 | m | ||
| Diode Forward Voltage | VSD | ISD=1AVGS=0V | 1 | V | ||
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VGS=4.5VVDS=15VID=12A | 9.8 | nC | ||
| Gate-Source Charge | Qgs | 2.2 | nC | |||
| Gate-Drain Charge | Qgd | 5.5 | nC | |||
| Turn-on Delay Time | td(on) | VGS=10VVDD=15VID=20A RGEN=1.5 | 6.4 | ns | ||
| Turn-on Rise Time | tr | 39 | ns | |||
| Turn-off Delay Time | td(off) | 21 | ns | |||
| Turn-off Fall Time | tf | 4.7 | ns | |||
| Capacitance | ||||||
| Input Capacitance | Ciss | VGS=0VVDS=15Vf=1MHZ | 896 | pF | ||
| Output Capacitance | Coss | 126 | pF | |||
| Reverse Transfer Capacitance | Crss | 108 | pF | |||
2405091033_JingYang-TNM1230N5X_C5364047.pdf
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