Wide Voltage Range Silicon Planar Zener Diodes Including Jingdao Microelectronics BZT52C22S for Voltage Control
Key Attributes
Model Number:
BZT52C22S
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
55Ω
Diode Configuration:
Independent
Zener Voltage(Range):
20.8V~23.3V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
22V
Impedance(Zzk):
250Ω
Mfr. Part #:
BZT52C22S
Package:
SOD-323
Product Description
Product Overview
Silicon Planar Zener Diodes with a wide zener reverse voltage range from 2.4V to 43V. These diodes are ideally suited for automated assembly processes and offer a total power dissipation of up to 200mW. They are designed for general-purpose applications requiring precise voltage regulation.
Product Attributes
- Brand: Jingdao Microelectronics
- Origin: Shandong, China
- Material: Silicon Planar
- Package: SOD-323
Technical Specifications
| Type | Zener Voltage Nom. (V) | Zener Voltage Min. (V) | Zener Voltage Max. (V) | Zener Voltage Test Current (mA) | Max. Zener Impedance () @ IZT | Max. Reverse Current (A) @ VR | Max. Power Dissipation (mW) | Operating & Storage Temp. Range (C) | Forward Voltage (V) @ IF | Thermal Resistance (C/W) |
| BZT52C2V4S | 2.4 | 2.2 | 2.5 | 5 | 100 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C2V7S | 2.7 | 2.5 | 2.9 | 5 | 100 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C3V0S | 3.0 | 2.8 | 3.2 | 5 | 100 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C3V3S | 3.3 | 3.1 | 3.5 | 5 | 100 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C3V6S | 3.6 | 3.4 | 3.7 | 5 | 100 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C3V9S | 3.9 | 3.7 | 4.1 | 5 | 100 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C4V3S | 4.3 | 4.0 | 4.4 | 5 | 100 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C4V7S | 4.7 | 4.4 | 4.8 | 5 | 100 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C5V1S | 5.1 | 4.8 | 5.2 | 5 | 100 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C5V6S | 5.6 | 5.2 | 5.8 | 5 | 100 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C6V2S | 6.2 | 5.8 | 6.4 | 5 | 95 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C6V8S | 6.8 | 6.4 | 7.0 | 5 | 95 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C7V5S | 7.5 | 7.0 | 7.7 | 5 | 90 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C8V2S | 8.2 | 7.7 | 8.5 | 5 | 90 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C9V1S | 9.1 | 8.5 | 9.4 | 5 | 80 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C10S | 10.0 | 9.4 | 10.4 | 5 | 60 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C11S | 11.0 | 10.4 | 11.4 | 5 | 40 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C12S | 12.0 | 11.4 | 12.4 | 5 | 40 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C13S | 13.0 | 12.4 | 13.8 | 5 | 40 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C15S | 15.0 | 13.8 | 15.3 | 5 | 40 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C16S | 16.0 | 15.3 | 16.8 | 5 | 40 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C18S | 18.0 | 16.8 | 18.8 | 5 | 40 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C20S | 20.0 | 18.8 | 20.8 | 5 | 45 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C22S | 22.0 | 20.8 | 22.8 | 5 | 55 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C24S | 24.0 | 22.8 | 25.1 | 5 | 55 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C27S | 27.0 | 25.1 | 28.0 | 2 | 70 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C30S | 30.0 | 28.0 | 31.0 | 2 | 80 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C33S | 33.0 | 31.0 | 34.0 | 2 | 80 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C36S | 36.0 | 34.0 | 37.0 | 2 | 80 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C39S | 39.0 | 37.0 | 41.0 | 2 | 90 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
| BZT52C43S | 43.0 | 41.0 | 46.0 | 2 | 130 | 10 | 200 | -55 ~ +150 | 0.9 @ 10mA | 625 |
2409301403_Jingdao-Microelectronics-BZT52C22S_C353547.pdf
Related Products
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
