P Channel Trench Power MOSFET JingYang JY3407X Featuring Low Gate Charge and Excellent RDS ON for Load Switch
Key Attributes
Model Number:
JY3407X
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.3A
RDS(on):
50mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
74pF
Number:
1 P-Channel
Output Capacitance(Coss):
98pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
580pF
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
JY3407X
Package:
SOT-23-3L
Product Description
Product Overview
The P-Channel Trench Power MOSFET utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as -4.5V. This device is ideal for load switch and PWM applications, offering high power and current handling capability.
Product Attributes
- Lead free product is acquired
Technical Specifications
| Device Marking | VDS (V) | ID (A) | RDS(ON) @ VGS=-10V (m) | RDS(ON) @ VGS=-4.5V (m) | Package | Ordering Quantity |
| JY3407X | -30 | -4.3 | <50 | <100 | SOT23-3L | 3000 units |
2405091034_JingYang-JY3407X_C3038097.pdf
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