Low Voltage Drive N Channel MOSFET JingYang TNM2K30K FX Ideal for Portable Equipment and Circuits

Key Attributes
Model Number: TNM2K30K-FX
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2Ω@4.5V,400mA
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Output Capacitance(Coss):
12.2pF
Input Capacitance(Ciss):
42pF
Pd - Power Dissipation:
350mW
Mfr. Part #:
TNM2K30K-FX
Package:
SOT-23
Product Description

Product Overview

The TNM2K30K-F is a N-Channel 30-V (D-S) MOSFET designed for low on-resistance and fast switching speeds. Its low voltage drive makes it ideal for portable equipment and interfacing applications. The device is easily designed into drive circuits and can be paralleled for increased current handling.

Product Attributes

  • Brand: JY Electronics
  • Origin: China
  • Model: TNM2K30K-F
  • Revision: A3

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
MAXIMUM RATINGS
Drain-Source VoltageVDS30V
Gate-Source VoltageVGS12V
Continuous Drain CurrentID0.5A
Power DissipationPD0.35W
Operation Junction and Storage Temperature RangeTJ,Tstg-55+150
Thermal Resistance, Junction-to-AmbientRJA357 /W
Off Characteristics
Drain-Source Breakdown VoltageVDS(BR)DSSVGS = 0V, ID = 10A30V
Zero Gate Voltage Drain CurrentIDSSVDS =30V,VGS = 0V1A
Gate Source leakage currentIGSSVGS =12V, VDS = 0V10A
On Characteristics
Gate Threshold VoltageVGS(th)VDS = VGS , ID =250A0.81.1V
Drain-Source On-ResistanceRDS(on)VGS = 10 V, ID =500mA1.0
VGS = 4.5V,ID =400mA1.2
VGS = 2.5V, ID =300mA2.0
VGS =1.8V,ID =200mA2.6
VGS =1.5V,ID =20mA3.4
Forward TransconductancegFSVDS =3V, ID = 10mA0.33mS
Dynamic Characteristics*
Input CapacitanceCissVDS =5V,VGS =0V,f =1MHz42pF
Output CapacitanceCossVDS =5V,VGS =0V,f =1MHz12.2pF
Reverse Transfer CapacitanceCrssVDS =5V,VGS =0V,f =1MHz8pF
Switching Characteristics*
Turn-On Delay Timetd(on)VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25 15ns
Rise TimetrVGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25 35ns
Turn-Off Delay Timetd(off)VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25 70ns
Fall TimetfVGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25 70ns

2303300930_JingYang-TNM2K30K-FX_C5380431.pdf

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