Small Signal NPN Transistor JKSEMI MMBT5551 SOT23 Package Suitable for General Purpose Applications
Key Attributes
Model Number:
MMBT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
MMBT5551
Package:
SOT-23
Product Description
Product Overview
The MMBT5551 is an NPN transistor in a SOT-23 plastic-encapsulate package. It offers a power dissipation of 300mW, high stability, and high reliability. This transistor is complementary to the MMBT5401 and is suitable for general-purpose applications requiring a small outline plastic package.
Product Attributes
- Brand: jksemi
- Package: SOT-23 Plastic-Encapsulate
- Marking: G1
- Certifications: UL Epoxy UL: 94V-0
- Mounting Position: Any
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Max | Unit |
| Maximum Ratings & Thermal Characteristics | |||||
| Collector-Base Voltage | VCBO | 180 | V | ||
| Collector-Emitter Voltage | VCEO | 160 | V | ||
| Emitter-Base Voltage | VEBO | 6 | V | ||
| Collector Current-Continuous | IC | 600 | mA | ||
| Collector Power Dissipation | PC | 300 | mW | ||
| Junction Temperature | Tj | 150 | |||
| Storage Temperature | Tstg | -55 | +150 | ||
| Thermal resistance From junction to ambient | RJA | 416 | /W | ||
| Electrical Characteristics | |||||
| Collector-base breakdown voltage | V(BR)CBO | IC=100uA, IE=0 | 180 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 160 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE=10uA, IC=0 | 6 | V | |
| Collector cut-off current | ICBO | VCB=120V, IE=0 | 50 | nA | |
| Emitter cut-off current | IEBO | VEB=4V, IC=0 | 50 | nA | |
| DC current gain | hFE(1) | VCE=5V, IC=1mA | 80 | ||
| hFE(2) | VCE=5V, IC=10mA | 100 | 300 | ||
| hFE(3) | VCE=5V, IC=50mA | 30 | |||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=10mA, IB=1mA | 0.15 | V | |
| VCE(sat)2 | IC=50mA, IB=5mA | 0.20 | V | ||
| Base -emitter saturation voltage | VBE(sat)1 | IC=10mA, IB=1mA | 1.00 | V | |
| VBE(sat)2 | IC=50mA, IB=5mA | 1.00 | V | ||
| Transition frequency | fT | VCE=10V, IC=10mA,f=100MHz | 100 | 300 | MHz |
| Collector output capacitance | Cob | VCB=10V, IE=0, f=1MHz | 6 | pF | |
| CLASSIFICATION OF hFE(2) | |||||
| HFE RANK | L | H | |||
| RANGE | 100-200 | 200-300 | |||
2409302201_JKSEMI-MMBT5551_C2972766.pdf
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