Power MOSFET Device Jingdao Microelectronics D5N65 with 650V Drain Source Voltage and Low Gate Charge
Key Attributes
Model Number:
D5N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
5A
RDS(on):
2.1Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Output Capacitance(Coss):
104pF
Pd - Power Dissipation:
54W
Input Capacitance(Ciss):
870pF
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
D5N65
Package:
TO-252-3
Product Description
Product Overview
The D5N65 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This device is commonly used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 650 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 5 | A | Tc=25°C |
| Continuous Drain Current | ID | 3.2 | A | Tc=100°C |
| Pulsed Drain Current (Note 2) | IDM | 20 | A | |
| Power Dissipation | PD | 54 | W | Tc=25°C |
| Avalanche Energy Single Pulsed (Note 3) | EAS | 310 | mJ | |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 2.1 | V/ns | |
| Junction Temperature and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250µA |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=±30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=650V, VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS, ID=250µA |
| Static Drain-Source On-State Resistance | RDS(ON) | 2.1 | Ω | VGS=10V, ID=2.5A |
| Input Capacitance | CISS | 870 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 104 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 13 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Total Gate Charge (Note 1) | QG | 36 | nC | VDS=480V, VGS=10V, ID=10A, IG=1mA |
| Gate-Drain Charge (Note 1) | QGD | 16 | nC | VDS=480V, VGS=10V, ID=10A, IG=1mA |
| Gate-Source Charge (Note 1) | QGS | 10 | nC | VDS=480V, VGS=10V, ID=10A, IG=1mA |
| Turn-On Delay Time (Note 1) | tD(ON) | 5 | ns | VDS=100V, VGS=10V, ID=5A, RG=25Ω |
| Turn-On Rise Time (Note 1) | tR | 14 | ns | VDS=100V, VGS=10V, ID=5A, RG=25Ω |
| Turn-Off Delay Time (Note 1) | tD(OFF) | 180 | ns | VDS=100V, VGS=10V, ID=5A, RG=25Ω |
| Turn-Off Fall Time (Note 1) | tF | 10 | ns | VDS=100V, VGS=10V, ID=5A, RG=25Ω |
| Maximum Body-Diode Continuous Current | IS | 5 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 20 | A | |
| Drain-Source Diode Forward Voltage (Note 1) | VSD | 1.4 | V | IS=5A, VGS=0V |
| Reverse Recovery Time (Note 1) | trr | 180 | ns | IS=5A, VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge (Note 1) | Qrr | 1.9 | µC | IS=5A, VGS=0V, di/dt=100A/us |
| THERMAL DATA | ||||
| Junction to Ambient | RthJA | 63 | °C/W | |
| Junction to Case | RthJC | 2.5 | °C/W | |
2202151500_Jingdao-Microelectronics-D5N65_C2935480.pdf
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