N channel power mosfet Jingdao Microelectronics F12N60 designed for switching in power supply systems
Key Attributes
Model Number:
F12N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
12A
RDS(on):
500mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF
Output Capacitance(Coss):
185pF
Input Capacitance(Ciss):
2nF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
34nC@10V
Mfr. Part #:
F12N60
Package:
ITO-220ABW
Product Description
Product Overview
The F12N60 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers superior characteristics including fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Model: F12N60
- Package: ITO-220ABW
- Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
- Lead Finish: Lead free, RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 600 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 12 | A | Tc=25°C |
| Continuous Drain Current | ID | 7.8 | A | Tc=100°C |
| Pulsed Drain Current | IDM | 48 | A | Note 2 |
| Power Dissipation | PD | 576 | W | |
| Avalanche Energy Single Pulsed | EAS | 48 | mJ | Note 3 |
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | Note 4 |
| Junction to Ambient Thermal Resistance | RthJA | 63 | °C/W | |
| Junction to Case Thermal Resistance | RthJC | 2.6 | °C/W | |
| Operation Junction and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS=0V,ID=250µA |
| Gate-Source Leakage Current | IGSS | ±1 | µA | VGS=±30V,VDS=0V |
| Drain-Source Leakage Current | IDSS | 250 | µA | VDS=600V,VGS=0V |
| Drain-Source Leakage Current | IDSS | 100 | µA | VDS=600V,VGS=0V, Tj=150°C |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250µA |
| Static Drain-Source On-State Resistance | RDS(ON) | 0.75 | Ω | VGS=10V,ID=12A |
| Input Capacitance | CISS | 1850 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 100 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 34 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Total Gate Charge | QG | 530 | nC | VDS=480V,VGS=10V, ID=12A,IG=1mA (Note 1,2) |
| Gate-Drain Charge | QGD | 15 | nC | VDS=480V,VGS=10V, ID=12A,IG=1mA (Note 1,2) |
| Gate-Source Charge | QGS | 7.6 | nC | VDS=480V,VGS=10V, ID=12A,IG=1mA (Note 1,2) |
| Turn-On Delay Time | tD(ON) | 24 | ns | VDS=100V,VGS=10V, ID=12A,RG=25Ω (Note 1,2) |
| Turn-On Rise Time | tR | 88 | ns | VDS=100V,VGS=10V, ID=12A,RG=25Ω (Note 1,2) |
| Turn-Off Delay Time | tD(OFF) | 52 | ns | VDS=100V,VGS=10V, ID=12A,RG=25Ω (Note 1,2) |
| Turn-Off Fall Time | tF | 48 | ns | VDS=100V,VGS=10V, ID=12A,RG=25Ω (Note 1,2) |
| Maximum Body-Diode Continuous Current | IS | 12 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 48 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=12A,VGS=0V (Note 1) |
| Reverse Recovery Time | trr | 530 | ns | IS=12A,VGS=0V, di/dt=100A/us (Note 1) |
| Reverse Recovery Charge | Qrr | 4.8 | µC | IS=12A,VGS=0V, di/dt=100A/us (Note 1) |
2412111839_Jingdao-Microelectronics-F12N60_C7469039.pdf
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