3A 20V N Channel MOSFET SOT 23 Package Jingdao Microelectronics NM2302B for PWM and Power Management
Key Attributes
Model Number:
NM2302B
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
RDS(on):
85mΩ@2.5V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
26pF
Pd - Power Dissipation:
700mW
Input Capacitance(Ciss):
220pF@10V
Gate Charge(Qg):
3.61nC@4.5V
Mfr. Part #:
NM2302B
Package:
SOT-23
Product Description
Product Overview
The NM2302B is a 3A, 20V N-Channel MOSFET in an SOT-23 package, designed for fast switching capability, improved dv/dt capability, and high ruggedness. It is suitable for load switch, PWM applications, and power management.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Package: SOT-23
- Type: N-Channel MOSFET
Technical Specifications
| Parameter | Symbol | Ratings | Units | Test Conditions |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 20 | V | |
| Gate-Source Voltage | VGSS | ±12 | V | |
| Pulsed Drain Current | IDM | 14 | A | Note 2 |
| Power Dissipation | PD | 0.7 | W | TA=25 |
| Continuous Drain Current | ID | 2.4 | A | TA=70 |
| Continuous Drain Current | ID | 3 | A | TA=25 |
| Operation Junction Temperature and Storage Temperature | TJ, Tstg | -55 ~ +150 | °C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V,ID=250µA |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VDS=0V,VGS=±12V |
| Static Drain-Source On-State Resistance | RDS(ON) | 85 | mΩ | VGS=2.5V,ID=2.0A |
| Static Drain-Source On-State Resistance | RDS(ON) | 55 | mΩ | VGS=4.5V,ID=3.0A |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=20V,VGS=0V |
| Gate Threshold Voltage | VGS(th) | 0.5 | V | VDS=VGS,ID=250µA |
| Input Capacitance | CISS | 220 | pF | VDS=10V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 34 | pF | VDS=10V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 26 | pF | VDS=10V, VGS=0V, f=1.0MHz |
| Total Gate Charge | QG | 6.8 | nC | VDS=10V,VGS=4.5V, ID=3A |
| Gate-Drain Charge | QGD | 1.1 | nC | VDS=10V,VGS=4.5V, ID=3A |
| Gate-Source Charge | QGS | 3.61 | nC | VDS=10V,VGS=4.5V, ID=3A |
| Turn-On Delay Time | tD(ON) | 14 | ns | VDS=10V,VGS=4.5V, RL=1.5Ω,RGEN=3Ω |
| Turn-On Rise Time | tR | 57 | ns | VDS=10V,VGS=4.5V, RL=1.5Ω,RGEN=3Ω |
| Turn-Off Delay Time | tD(OFF) | 53 | ns | VDS=10V,VGS=4.5V, RL=1.5Ω,RGEN=3Ω |
| Turn-Off Fall Time | tF | 3 | ns | VDS=10V,VGS=4.5V, RL=1.5Ω,RGEN=3Ω |
| Maximum Body-Diode Continuous Current | IS | 20 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | IS=3A,VGS=0V |
2410010301_Jingdao-Microelectronics-NM2302B_C5155289.pdf
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