N Channel Power MOSFET Jingdao Microelectronics F7N70L Designed for High Speed Switching Performance
Key Attributes
Model Number:
F7N70L
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
7A
RDS(on):
1.3Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.5pF
Output Capacitance(Coss):
27pF
Pd - Power Dissipation:
32W
Input Capacitance(Ciss):
497pF
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
F7N70L
Package:
TO-220F-3
Product Description
Product Overview
The F7N70 is a high voltage N-channel Power MOSFET from Jingdao Microelectronics, designed for high-speed switching applications. It features advanced trench MOSFET technology, offering fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This makes it ideal for use in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 700 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 7 | A | Tc=25 |
| Pulsed Drain Current (Note 2) | IDM | 28 | A | |
| Avalanche Energy Single Pulsed (Note 3) | EAS | 32 | mJ | L = 10mH, IAS = 7.5A, VDD = 50V, RG = 25 , Starting TJ = 25C |
| Power Dissipation | PD | 281.3 | W | Tc=25 |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 4.5 | V/ns | ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25C |
| Operation Junction Temperature and Storage Temperature | TJ, stg | -55 ~ +150 | °C | |
| THERMAL DATA | ||||
| Junction to Ambient | RthJA | 63 | °C/W | |
| Junction to Case | RthJC | 2.99 | °C/W | |
| ELECTRICAL CHARACTERISTICS | ||||
| OFF CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 700 | V | VGS=0V, ID=0.25mA |
| Gate-Source Leakage Current | IGSS | ±10 | nA | VGS=±30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 1.3 | uA | VDS=700V, VGS=0V |
| ON CHARACTERISTICS | ||||
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS, ID=0.25mA |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.3 | Ω | VGS=10V, ID=3.5A |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | CISS | 497 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 100 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 18 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| SWITCHING CHARACTERISTICS | ||||
| Total Gate Charge (Note 1) | QG | 317 | nC | VDS=560V, VGS=10V, ID=7A, IG=1mA (NOTE1,2) |
| Gate-Drain Charge | QGD | 3.9 | nC | VDS=560V, VGS=10V, ID=7A, IG=1mA (NOTE1,2) |
| Gate-Source Charge | QGS | 10 | nC | VDS=560V, VGS=10V, ID=7A, IG=1mA (NOTE1,2) |
| Turn-On Delay Time (Note 1) | tD(ON) | 53 | ns | VDS=100V, VGS=10V, ID=7A, RG=25Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 28 | ns | VDS=100V, VGS=10V, ID=7A, RG=25Ω (NOTE1,2) |
| Turn-Off Delay Time | tD(OFF) | 26 | ns | VDS=100V, VGS=10V, ID=7A, RG=25Ω (NOTE1,2) |
| Turn-Off Fall Time | tF | 7 | ns | VDS=100V, VGS=10V, ID=7A, RG=25Ω (NOTE1,2) |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||
| Maximum Body-Diode Continuous Current | IS | 7 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 28 | A | |
| Drain-Source Diode Forward Voltage (Note 1) | VSD | 1.4 | V | IS=7A, VGS=0V |
| Reverse Recovery Time (Note 1) | trr | 317 | ns | IS=7A, VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 2.4 | uC | IS=7A, VGS=0V, di/dt=100A/us |
2206131630_Jingdao-Microelectronics-F7N70L_C2981743.pdf
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