Power MOSFET Jingdao Microelectronics D2N65 designed for high speed switching and power supply circuits
Key Attributes
Model Number:
D2N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
2A
RDS(on):
4.3Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.2pF
Output Capacitance(Coss):
30pF
Pd - Power Dissipation:
32W
Input Capacitance(Ciss):
260pF
Gate Charge(Qg):
8.97nC@10V
Mfr. Part #:
D2N65
Package:
TO-252-3
Product Description
Product Overview
The D2N65 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It features advanced trench MOSFET technology, offering fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This makes it suitable for use in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 650 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Pulsed Drain Current | IDM | 2.1 | A | Pulse width limited by maximum junction temperature. |
| Avalanche Energy Single Pulsed | EAS | 108 | mJ | L = 30mH, IAS = 3.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C |
| Power Dissipation | PD | 32 | W | |
| Continuous Drain Current | ID | 2.0 | A | TA=25°C |
| Peak Diode Recovery dv/dt | dv/dt | 4.3 | V/ns | ISD ≤ 2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C |
| Operation Junction Temperature and Storage Temperature | TJ, stg | -55 ~ +150 | °C | |
| THERMAL DATA | ||||
| Junction to Ambient | RthJA | 63 | °C/W | Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. |
| Junction to Case | RthJC | 2.31 | °C/W | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=0.25mA |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=±30V, VDS=0V |
| Static Drain-Source On-State Resistance | RDS(ON) | 4.3 | Ω | VGS=10V, ID=2.0A |
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS=650V, VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS, ID=0.25mA |
| Input Capacitance | CISS | 260 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 22.4 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 8.4 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Total Gate Charge | QG | 15.1 | nC | VDS=520V, VGS=10V, ID=2A, IG=1mA (Note 1, 2) |
| Gate-Drain Charge | QGD | 4.02 | nC | VDS=520V, VGS=10V, ID=2A, IG=1mA (Note 1, 2) |
| Gate-Source Charge | QGS | 8.97 | nC | VDS=520V, VGS=10V, ID=2A, IG=1mA (Note 1, 2) |
| Turn-On Delay Time | tD(ON) | 8.4 | ns | VDS=325V, VGS=10V, ID=2A, RG=25Ω (Note 1, 2) |
| Turn-On Rise Time | tR | 24.1 | ns | VDS=325V, VGS=10V, ID=2A, RG=25Ω (Note 1, 2) |
| Turn-Off Delay Time | tD(OFF) | 22.4 | ns | VDS=325V, VGS=10V, ID=2A, RG=25Ω (Note 1, 2) |
| Turn-Off Fall Time | tF | 1.4 | ns | VDS=325V, VGS=10V, ID=2A, RG=25Ω (Note 1, 2) |
| Maximum Body-Diode Continuous Current | IS | 2.0 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 8.0 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=2A, VGS=0V (Note 1) |
| Reverse Recovery Time | trr | 370 | ns | IS=2A, VGS=0V, di/dt=100A/μs (Note 1) |
| Reverse Recovery Charge | Qrr | 0.95 | μC | IS=2A, VGS=0V, di/dt=100A/μs (Note 1) |
2109011830_Jingdao-Microelectronics-D2N65_C2875694.pdf
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