Super Fast Recovery Rectifier Diode JSCJ ES1HF with 200V Peak Reverse Voltage and 1A Forward Current
Key Attributes
Model Number:
ES1HF
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
500V
Voltage - Forward(Vf@If):
1.7V@1.0A
Current - Rectified:
1A
Mfr. Part #:
ES1HF
Package:
DO-214AD
Product Description
Product Overview
The ES1AF through ES1JF series are Super Fast Recovery Rectifier Diodes designed for high-speed rectification applications. They offer high surge current capability and are suitable for use as rectifiers. These diodes are available in SMAF package with a color band denoting the cathode.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulate Diodes
- Color: Color band denotes cathode
Technical Specifications
| Item | Symbol | Unit | Test Conditions | ES1AF-ES1DF | ES1EF-ES1GF | ES1HF-ES1JF |
| Repetitive Peak Reverse Voltage | VRRM | V | 50 | 100 | 200 | |
| Average Forward Current | IF(AV) | A | 1.0 | 1.0 | 1.0 | |
| Surge(Non-repetitive)Forward Current | IFSM | A | 60Hz Half-sine wave, 1 cycle, Ta=25 | 30 | 30 | 30 |
| Maximum RMS Voltage | VRMS | V | 60Hz Half-sine wave, Resistance load, TL=120 | 35 | 70 | 140 |
| Peak Forward Voltage | VF | V | IF =1.0A | 0.95 | 1.25 | 1.70 |
| Maximum reverse recovery time | trr | ns | IF=0.5A,IR=1.0A,Irr A VRM=VRRM | 35 | 35 | 35 |
| Peak Reverse Current | IRRM1 | A | VRRM, Tj=25 | 100 | 100 | 100 |
| Peak Reverse Current | IRRM2 | A | VRRM, Tj=100 | 150 | 150 | 150 |
| Peak Reverse Current | IRRM2 | A | VRRM, Tj=125 | 200 | 200 | 200 |
| Peak Reverse Current | IRRM2 | A | VRRM, Tj=150 | 300 | 300 | 300 |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | ||
| Thermal Resistance(Typical) | R J-A | /W | Junction to ambient | 85 | 85 | 85 |
| Thermal Resistance(Typical) | R J-L | /W | Junction to terminal | 35 | 35 | 35 |
2410121810_JSCJ-ES1HF_C3019328.pdf
Related Products
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
