Power MOSFET Jingdao Microelectronics F12N60L designed for switching in power supply and adaptor systems
Key Attributes
Model Number:
F12N60L
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
12A
RDS(on):
750mΩ@10V,6A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Output Capacitance(Coss):
185pF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
2.14nF@25V
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
F12N60L
Package:
TO-220F-3L
Product Description
Product Overview
The F12N60L is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics
- Origin: Shandong, China
- Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
- Color: Not specified
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbols | Ratings | Units | Test Conditions |
| Absolute Maximum Ratings (Ta=25C, Unless Otherwise Specified) | ||||
| Drain-Source Voltage | VDSS | 600 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 12 | A | Tc=25C |
| Pulsed Drain Current (Note 2) | IDM | 48 | A | |
| Avalanche Energy Single Pulsed (Note 3) | EAS | 576 | mJ | L = 10mH, IAS =6.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C |
| Power Dissipation (Tc = 25°C) | PD | 7.8 | W | |
| Operating junction and storage temperature | TJ,TSTG | -55 ~+150 | °C | |
| Thermal Resistance | ||||
| Thermal resistance, junction – case | RthJC | 4 | °C/W | Tc=25°C |
| Thermal resistance, junction – case | RthJC | 63 | °C/W | Tc=100°C |
| Thermal resistance, junction – ambient(min. footprint) | RthJA | 50 | °C/W | |
| Electrical Characteristics (ta=25°c, Unless Otherwise Specified) | ||||
| Off Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS=0V,ID=250µA |
| Gate- Source Leakage Current | IGSS | ±1.0 | µA | VGS=-30V,VDS=0V |
| Drain-Source Leakage Current | IDSS | 250 | nA | VDS=600V,VGS=0V |
| On Characteristics | ||||
| Static Drain-Source On-State Resistance | RDS(ON) | 0.75 | Ω | VGS=10V,ID=6.0A |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250µA |
| Forward Transconductance | gfs | 5.7 | S | VDS=15V,ID=2A |
| Switching Characteristics | ||||
| Total Gate Charge (Note 1) | QG | 48 | nC | VDS=480V,VGS=10V, ID=12A (NOTE1,2) |
| Gate-Drain Charge | QGD | 8.5 | nC | |
| Gate-Source Charge | QGS | 21 | nC | |
| Turn-On Delay Time (Note 1) | tD(ON) | 30 | ns | VDS=300V, RG=25Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 85 | ns | |
| Turn-Off Delay Time | tD(OFF) | 140 | ns | |
| Turn-Off Fall Time | tF | 90 | ns | |
| Drain-Source Diode Characteristics And Maximum Ratings | ||||
| Drain-Source Diode Forward Voltage (Note 1) | VSD | 1.4 | V | ISD=12A,VGS=0V |
| Reverse Recovery Time (Note 1) | trr | 425 | ns | IF=12A di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 4.3 | µC | |
| Maximum Body-Diode Continuous Current | IS | 12 | A | |
| Dynamic Characteristics | ||||
| Input Capacitance | CISS | 2140 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 185 | pF | |
| Reverse Transfer Capacitance | CRSS | 10 | pF | |
| Gate resistance | RG | 2.6 | Ω | |
2305040947_Jingdao-Microelectronics-F12N60L_C5632443.pdf
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