Power mosfet for switching applications Jingdao Microelectronics F2N60 n channel high voltage device
Key Attributes
Model Number:
F2N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
2A
RDS(on):
3.4Ω@10V
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Pd - Power Dissipation:
43W
Output Capacitance(Coss):
66pF
Input Capacitance(Ciss):
564pF
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
F2N60
Package:
ITO-220ABW
Product Description
Product Overview
The F2N60 is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Model: F2N60
- Package: ITO-220ABW
- Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 600 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 2.1 | A | Tc=25 |
| Continuous Drain Current | ID | 1.4 | A | Tc=100 |
| Pulsed Drain Current | IDM | 43 | A | Note 2 |
| Power Dissipation | PD | 140 | W | Tc=25 |
| Avalanche Energy Single Pulsed | EAS | 63 | mJ | Note 3 |
| Peak Diode Recovery dv/dt | dv/dt | 2.1 | V/ns | Note 4 |
| Operation Junction Temperature and Storage Temperature | TJ, stg | -55 ~ +150 | °C | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS=0V, ID=250uA |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=±30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=600V, VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS, ID=250uA |
| Static Drain-Source On-State Resistance | RDS(ON) | 4.0 | Ω | VGS=10V, ID=1.0A |
| Input Capacitance | CISS | 564 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 66 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 12 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Total Gate Charge | QG | 13 | nC | VDS=480V, VGS=10V, ID=2A, IG=1mA (NOTE1,2) |
| Turn-On Delay Time | tD(ON) | 7 | ns | VDS=100V, VGS=10V, ID=2A, RG=25Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 22 | ns | VDS=100V, VGS=10V, ID=2A, RG=25Ω (NOTE1,2) |
| Turn-Off Delay Time | tD(OFF) | 16 | ns | VDS=100V, VGS=10V, ID=2A, RG=25Ω (NOTE1,2) |
| Turn-Off Fall Time | tF | 22 | ns | VDS=100V, VGS=10V, ID=2A, RG=25Ω (NOTE1,2) |
| Maximum Body-Diode Continuous Current | IS | 2.1 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 8 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=2A,VGS=0V |
| Reverse Recovery Time | trr | 250 | ns | IS=2A,VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 4.5 | uC | IS=2A,VGS=0V, di/dt=100A/us |
| THERMAL DATA | ||||
| Junction to Ambient | RthJA | 63 | °C/W | |
| Junction to Case | RthJC | 2.9 | °C/W | |
2209091800_Jingdao-Microelectronics-F2N60_C5157078.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
