Power Management P Channel MOSFET Featuring 30V Drain Source Voltage Jingdao Microelectronics PM3401A SOT 23 Package
Key Attributes
Model Number:
PM3401A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
48pF
Input Capacitance(Ciss):
1.02nF
Mfr. Part #:
PM3401A
Package:
SOT-23
Product Description
Product Overview
The PM3401A is a P-CHANNEL MOSFET designed for power management applications. It features a drain-source voltage of -30V and low on-state resistance (RDS(ON) 90m @ VGS = -10V). This MOSFET is suitable for power management in notebooks, portable equipment, battery-powered systems, and load switching.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | TA=25C | -3 | A | ||
| Pulsed Drain Current | IDM | (Note1) | -16 | A | ||
| Power Dissipation | PD | 1.4 | W | |||
| Thermal Resistance-Junction to Ambient | RJA | 1.25 | C/W | |||
| Operation Junction Temperature | TJ | 150 | C | |||
| Storage Temperature | Tstg | -55 | +150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS =0V, ID =-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS =-30V, VGS =0V | -1 | uA | ||
| Gate-Source Leakage Current (Forward) | IGSS | VGS =12V, VDS =0V | 100 | nA | ||
| Gate-Source Leakage Current (Reverse) | IGSS | VGS =-12V, VDS =0V | -100 | nA | ||
| Gate Threshold Voltage | Vth(GS) | VDS =VGS, ID =-250uA | -0.5 | -0.85 | -1.3 | V |
| Static Drain-Source On-State Resistance | RDS(ON) | VGS =-10V, ID =-3.0A | 70 | 90 | m | |
| Static Drain-Source On-State Resistance | RDS(ON) | VGS =-4.5V, ID =-2.0A | 85 | 110 | m | |
| Drain-Source Diode Forward Voltage | VSD | IS =-3.0A, VGS =0V | -1.4 | V | ||
| Input Capacitance | Ciss | VDS =-15V, VGS =0V, f =1.0MHz | 1020 | pF | ||
| Output Capacitance | Coss | VDS =-15V, VGS =0V, f =1.0MHz | 60 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =-15V, VGS =0V, f =1.0MHz | 48 | pF | ||
| Total Gate Charge | QG | VDS =-15V, VGS =-4.5V, ID=-5.3A | 9.2 | nC | ||
| Gate-Source Charge | QGS | VDS =-15V, VGS =-4.5V, ID=-5.3A | 3.2 | nC | ||
| Gate-Drain Charge | QGD | VDS =-15V, VGS =-4.5V, ID=-5.3A | 2.3 | nC | ||
| Turn-On Delay Time | td(on) | VDS =-15V, VGS =-10V, RL =3.6, RGEN =6 | 41 | ns | ||
| Turn-On Rise Time | tr | VDS =-15V, VGS =-10V, RL =3.6, RGEN =6 | 27 | ns | ||
| Turn-Off Delay Time | td(o) | VDS =-15V, VGS =-10V, RL =3.6, RGEN =6 | 57 | ns | ||
| Turn-Off Fall Time | tf | VDS =-15V, VGS =-10V, RL =3.6, RGEN =6 | 6 | ns | ||
2512261439_Jingdao-Microelectronics-PM3401A_C5155291.pdf
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