N channel power MOSFET with low gate charge and high avalanche energy Jingdao Microelectronics V2N65
Key Attributes
Model Number:
V2N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
2A
RDS(on):
5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.2pF
Output Capacitance(Coss):
30pF
Pd - Power Dissipation:
54W
Input Capacitance(Ciss):
260pF@25V
Gate Charge(Qg):
8.97nC@10V
Mfr. Part #:
V2N65
Package:
TO-251ABW
Product Description
Product Overview
The V2N65 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It features advanced trench MOSFET technology, offering fast switching times, low gate charge, low on-state resistance, and high avalanche ruggedness. This makes it ideal for use in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics
- Product Name: V2N65
- Case: TO-251ABW
- Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
- Certifications: RoHS compliant
- Origin: Shandong, China
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V,ID=250uA |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Pulsed Drain Current | IDM | 2 | A | Note 2 |
| Continuous Drain Current | ID | 2.1 | A | Tc=25 |
| Continuous Drain Current | ID | 1.45 | A | Tc=100 |
| Avalanche Energy Single Pulsed | EAS | 108 | mJ | Note 3 |
| Power Dissipation | PD | 54 | W | |
| Peak Diode Recovery dv/dt | dv/dt | 4.3 | V/ns | Note 4 |
| Operation Junction Temperature and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| Junction to Ambient Thermal Resistance | RthJA | 63 | °C/W | Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. |
| Junction to Case Thermal Resistance | RthJC | 2.31 | °C/W | |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=-30V,VDS=0V |
| Static Drain-Source On-State Resistance | RDS(ON) | ≤5 | Ω | VGS=10V,ID=1.0A |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=650V,VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250µA |
| Input Capacitance | CISS | 260 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 30 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 8.97 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Total Gate Charge | QG | 22.4 | nC | VDS=520V,VGS=10V, ID=2A,IG=1mA (NOTE1,2) |
| Gate-Drain Charge | QGD | 8.4 | nC | VDS=520V,VGS=10V, ID=2A,IG=1mA (NOTE1,2) |
| Gate-Source Charge | QGS | 15.1 | nC | VDS=520V,VGS=10V, ID=2A,IG=1mA (NOTE1,2) |
| Turn-On Delay Time | tD(ON) | 24.1 | ns | VDS=325V,VGS=10V, ID=2A,RG=25Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 8.0 | ns | VDS=325V,VGS=10V, ID=2A,RG=25Ω (NOTE1,2) |
| Turn-Off Delay Time | tD(OFF) | 251 | ns | VDS=325V,VGS=10V, ID=2A,RG=25Ω (NOTE1,2) |
| Turn-Off Fall Time | tF | 370 | ns | VDS=325V,VGS=10V, ID=2A,RG=25Ω (NOTE1,2) |
| Maximum Body-Diode Continuous Current | IS | 2 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 8 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=2A,VGS=0V |
| Reverse Recovery Time | trr | 370 | ns | IS=2A,VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 0.95 | µC | IS=2A,VGS=0V, di/dt=100A/us |
2201121700_Jingdao-Microelectronics-V2N65_C2935481.pdf
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