Power mosfet device Jingdao Microelectronics D11N20 designed for rugged avalanche and high speed switching
Key Attributes
Model Number:
D11N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
11A
RDS(on):
400mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Output Capacitance(Coss):
90pF
Pd - Power Dissipation:
74W
Input Capacitance(Ciss):
1nF
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
D11N20
Package:
TO-252-2
Product Description
Product Overview
The D11N20 is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It features advanced trench MOSFET technology for improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong Jingdao Microelectronics Co., Ltd.
- Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 200 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 11 | A | TC=25°C |
| Pulsed Drain Current | IDM | 44 | A | Note 2 |
| Avalanche Energy Single Pulsed | EAS | 180 | mJ | L = 1mH,, VDD = 50V, RG = 20 Ω, Starting TJ = 25°C |
| Power Dissipation | PD | 74 | W | |
| Peak Diode Recovery dv/dt | dv/dt | 2.1 | V/ns | ISD ≤ 11A, di/dt ≤200A/s, VDD ≤ BVDSS, Starting TJ = 25°C |
| Operation Junction Temperature and Storage Temperature | TJ, Tstg | -55 ~ +150 | °C | |
| THERMAL DATA | ||||
| Junction to Ambient | RthJA | 63 | °C/W | Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. |
| Junction to Case | RthJC | 2.31 | °C/W | |
| ELECTRICAL CHARACTERISTICS | ||||
| OFF CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS=0V, ID=250uA |
| Gate-Source Leakage Current | IGSS | ≤ 1 | μA | VGS=±30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | ≤ 20 | μA | VDS=200V, VGS=0V |
| ON CHARACTERISTICS | ||||
| Gate Threshold Voltage | VGS(TH) | 0.8 ~ 3.0 | V | VDS=VGS, ID=250uA |
| Static Drain-Source On-State Resistance | RDS(ON) | ≤ 0.4 | Ω | VGS=10V, ID=5.5A |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | CISS | 1000 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 120 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 16.5 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| SWITCHING CHARACTERISTICS | ||||
| Total Gate Charge | QG | 31 | nC | VDS=160V,VGS=10V, ID=11A,IG=1mA (NOTE1,2) |
| Turn-On Delay Time | tD(ON) | 3.3 | ns | VDS=100V,VGS=10V, ID=11A,RG=20Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 3.5 | ns | VDS=100V,VGS=10V, ID=11A,RG=20Ω (NOTE1,2) |
| Turn-Off Delay Time | tD(OFF) | 150 | ns | VDS=100V,VGS=10V, ID=11A,RG=20Ω (NOTE1,2) |
| Turn-Off Fall Time | tF | 20 | ns | VDS=100V,VGS=10V, ID=11A,RG=20Ω (NOTE1,2) |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||
| Maximum Body-Diode Continuous Current | IS | 11 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 44 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=11A, VGS=0V |
| Reverse Recovery Time | trr | 370 | ns | IS=11A,VGS=0V, di/dt=100A/s |
| Reverse Recovery Charge | Qrr | 0.95 | μC | IS=11A,VGS=0V, di/dt=100A/s |
2201121700_Jingdao-Microelectronics-D11N20_C2935478.pdf
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