Electronic component JingYang MMBT5551 NPN transistor for medium power amplification and switching

Name: Electronic component JingYang MMBT5551 NPN transistor for medium power amplification and switching
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MMBT5551
Availability: InStock

Key Attributes

Model Number: MMBT5551

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

50nA

Pd - Power Dissipation:

300mW

Transition Frequency(fT):

300MHz

Type:

NPN

Number:

1 NPN

Current - Collector(Ic):

600mA

Collector - Emitter Voltage VCEO:

160V

Operating Temperature:

-55℃~+150℃

Mfr. Part #:

MMBT5551

Package:

SOT-23

Product Description

MMBT5551 NPN Transistor

The MMBT5551 is an NPN transistor designed as a complementary part to the MMBT5401. It is ideal for medium power amplification and switching applications.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Breakdown Voltage	V(BR)CBO	IC=100A, IE=0	180			V
	V(BR)CEO	IC=1mA, IB=0	160			V
	V(BR)EBO	IE=10A, IC=0	6			V
Cut-off Current	ICBO	VCB=120V, IE=0			50	nA
Cut-off Current	IEBO	VEB=4V, IC=0			50	nA
DC Current Gain	hFE(1)	VCE=5V, IC=1mA	80
	hFE(2)	VCE=5V, IC=10mA	100	300
	hFE(3)	VCE=5V, IC=50mA	50
Collector-Emitter Saturation Voltage	VCE(sat)1	IC=10mA, IB=1mA		0.15		V
Collector-Emitter Saturation Voltage	VCE(sat)2	IC=50mA, IB=5mA		0.2		V
Base-Emitter Saturation Voltage	VBE(sat)1	IC=10mA, IB=1mA		1		V
Base-Emitter Saturation Voltage	VBE(sat)2	IC=50mA, IB=5mA		1		V
Transition Frequency	fT	VCE=10V,IC=10mA, f=100MHz	100	300		MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1MHz		6		pF

Maximum Ratings

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	180	V	Ta=25 unless otherwise noted
Collector-Emitter Voltage	VCEO	160	V	Ta=25 unless otherwise noted
Emitter-Base Voltage	VEBO	6	V	Ta=25 unless otherwise noted
Collector Current	IC	600	mA	Ta=25 unless otherwise noted
Collector Power Dissipation	PC	300	mW	Ta=25 unless otherwise noted
Thermal Resistance Junction To Ambient	RJA	416	/W	Ta=25 unless otherwise noted
Operation Junction and Storage Temperature Range	TJ,Tstg	-55+150		Ta=25 unless otherwise noted

Package Information

Package Type: SOT23

Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR

Marking

GXYY (X: wafer's Lot No, internal code; YY: internal code)

2410010333_JingYang-MMBT5551_C22459278.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.

Electronic component JingYang MMBT5551 NPN transistor for medium power amplification and switching