High voltage MOSFET with fast switching and ruggedness features Jingdao Microelectronics D4N65 N channel power device
Key Attributes
Model Number:
D4N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
2.6Ω@10V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Output Capacitance(Coss):
55pF
Pd - Power Dissipation:
32W
Input Capacitance(Ciss):
560pF
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
D4N65
Package:
TO-252-3
Product Description
Product Overview
The D4N65 is a high voltage N-channel Power MOSFET designed with advanced trench technology. It offers superior characteristics such as fast switching times, low gate charge, low on-state resistance, and high avalanche ruggedness. This MOSFET is ideal for high-speed switching applications, commonly found in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Drain-Source Voltage | VDSS | 650 | V | |
| Gate-Source Voltage | VGSS | 30 | V | |
| Continuous Drain Current | ID | 4 | A | TA=25C |
| Pulsed Drain Current | IDM | 16 | A | Note 2 |
| Avalanche Energy Single Pulsed | EAS | 173 | mJ | L = 30mH, IAS = 3.4A, VDD = 50V, RG = 25 , Starting TJ = 25C (Note 3) |
| Power Dissipation | PD | 32 | W | TA=25C |
| Peak Diode Recovery dv/dt | dv/dt | 2.1 | V/ns | ISD 4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C (Note 4) |
| Operation Junction Temperature and Storage Temperature | Tj, stg | -55 ~ +150 | C | |
| Junction to Ambient Thermal Resistance | RthJA | 63 | C/W | Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. |
| Junction to Case Thermal Resistance | RthJC | 2.6 | C/W | |
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=0.25mA |
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=-30V,VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=650V,VGS=0V |
| Static Drain-Source On-State Resistance | RDS(ON) | 2.7 | VGS=10V, ID=2.0A | |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250uA |
| Input Capacitance | CISS | 560 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 55 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 10 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Total Gate Charge | QG | 13 | nC | VDS=520V,VGS=10V, ID=4A,IG=1mA (NOTE1,2) |
| Gate-Drain Charge | QGD | 4.0 | nC | VDS=520V,VGS=10V, ID=4A,IG=1mA (NOTE1,2) |
| Gate-Source Charge | QGS | 4.5 | nC | VDS=520V,VGS=10V, ID=4A,IG=1mA (NOTE1,2) |
| Turn-On Delay Time | tD(ON) | 16 | ns | VDS=100V,VGS=10V, ID=4A,RG=25 (NOTE1,2) |
| Turn-On Rise Time | tR | 22 | ns | VDS=100V,VGS=10V, ID=4A,RG=25 (NOTE1,2) |
| Turn-Off Delay Time | tD(OFF) | 4 | ns | VDS=100V,VGS=10V, ID=4A,RG=25 (NOTE1,2) |
| Turn-Off Fall Time | tF | 8 | ns | VDS=100V,VGS=10V, ID=4A,RG=25 (NOTE1,2) |
| Maximum Body-Diode Continuous Current | IS | 4 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 16 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=7A,VGS=0V (Note 1) |
| Reverse Recovery Time | trr | 250 | ns | IS=4A,VGS=0V, di/dt=100A/us (Note 1) |
| Reverse Recovery Charge | Qrr | 4.5 | uC | IS=4A,VGS=0V, di/dt=100A/us (Note 1) |
2108230930_Jingdao-Microelectronics-D4N65_C2875695.pdf
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