TO92 Package NPN Transistor JingYang 2N3904X Suitable for Switching and Amplifier Electronic Circuits
Key Attributes
Model Number:
2N3904X
Product Custom Attributes
Emitter-Base Voltage(Vebo):
8V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
625mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
2N3904X
Package:
TO-92
Product Description
Product Overview
NPN Silicon Epitaxial Planar Transistor designed for switching and amplifier applications. Complementary PNP types include 2N3905 and 2N3906. Custom pin configurations are available upon request.
Product Attributes
- Brand: JY Electronics
- Package: TO-92 Plastic
- Origin: China (implied by URL)
Technical Specifications
| Parameter | Symbol | 2N3903X Min. | 2N3903X Max. | 2N3904X Min. | 2N3904X Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Collector Base Voltage | VCBO | 60 | V | |||
| Collector Emitter Voltage | VCEO | 40 | V | |||
| Emitter Base Voltage | VEBO | 6 | V | |||
| Collector Current | IC | 200 | mA | |||
| Power Dissipation | Ptot | 625 | mW | |||
| Junction Temperature | Tj | 150 | OC | |||
| Storage Temperature Range | Tstg | -55 | +150 | OC | ||
| Characteristics (Ta = 25 OC) | ||||||
| DC Current Gain (VCE = 1 V, IC = 0.1 mA) | hFE | 20 | 40 | |||
| DC Current Gain (VCE = 1 V, IC = 1 mA) | hFE | 35 | 70 | |||
| DC Current Gain (VCE = 1 V, IC = 10 mA) | hFE | 50 | 100 | |||
| DC Current Gain (VCE = 1 V, IC = 50 mA) | hFE | 30 | 60 | |||
| DC Current Gain (VCE = 1 V, IC = 100 mA) | hFE | 15 | 30 | |||
| Collector Base Cutoff Current (VCB = 30 V) | ICBO | 50 | 50 | nA | ||
| Emitter Base Cutoff Current (VEB = 6 V) | IEBO | 50 | 50 | nA | ||
| Collector Base Breakdown Voltage (IC = 10 A) | V(BR)CBO | 60 | 60 | V | ||
| Collector Emitter Breakdown Voltage (IC = 1 mA) | V(BR)CEO | 40 | 40 | V | ||
| Emitter Base Breakdown Voltage (IE = 10 A) | V(BR)EBO | 6 | 6 | V | ||
| Collector Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) | VCE(sat) | 0.2 | 0.2 | V | ||
| Collector Emitter Saturation Voltage (IC = 50 mA, IB = 5 mA) | VCE(sat) | 0.3 | 0.3 | V | ||
| Base Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) | VBE(sat) | 0.85 | 0.85 | V | ||
| Base Emitter Saturation Voltage (IC = 50 mA, IB = 5 mA) | VBE(sat) | 0.95 | 0.95 | V | ||
| Gain Bandwidth Product (VCE = 20 V, IC = 10 mA, f = 100 MHz) | fT | 250 | 300 | MHz | ||
| Collector Base Capacitance (VCB = 5 V, f = 100 KHz) | Cob | 4 | 4 | pF | ||
| Delay Time (VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA) | td | 35 | 35 | ns | ||
| Rise Time (VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA) | tr | 35 | 35 | ns | ||
| Storage Time (VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA) | ts | 200 | 200 | ns | ||
| Fall Time (VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA) | tf | 50 | 50 | ns | ||
2405091034_JingYang-2N3904X_C5156722.pdf
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