Low reverse current and high speed switching diode JingYang RB751V-40X for electronic circuit design
Key Attributes
Model Number:
RB751V-40X
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
500nA@30V
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
370mV@1mA
Current - Rectified:
300mA
Mfr. Part #:
RB751V-40X
Package:
SOD-323
Product Description
Product Overview
The RB751V-40 is a silicon epitaxial planar Schottky barrier diode designed for high-speed switching applications. It features a small surface mounting type, low reverse current, and low forward voltage, offering high reliability for its intended use.
Product Attributes
- Marking: "5" or "E4"
- ESD sensitive product handling required.
Technical Specifications
| Parameter | Symbol | Value | Unit | Typ. | Max. | Unit | Note |
| Absolute Maximum Ratings (Ta = 25 OC) | |||||||
| Peak Reverse Voltage | VRM | 40 | V | ||||
| Reverse Voltage | VR | 30 | V | ||||
| Average Forward Rectifying Current | IF(AV) | 300 | mA | ||||
| Peak Forward Surge Current (60 Hz for 1 Cyc.) | IFSM | 600 | mA | ||||
| Junction Temperature | Tj | 150 | OC | ||||
| Storage Temperature Range | Tstg | - 55 to + 150 | OC | ||||
| Power Dissipation | PD | 0.2 | W | FR-4 Board = 5 x 5 cm. Minmum Pad Layout | |||
| Characteristics at Ta = 25 OC | |||||||
| Forward Voltage at IF = 1 mA | VF | V | 0.37 | V | |||
| Reverse Current at VR = 30 V | IR | A | 0.5 | A | |||
| Capacitance Between Terminals at VR = 1 V, f = 1 MHz | CT | pF | 2 | pF | |||
2212071830_JingYang-RB751V-40X_C5307985.pdf
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