Low RDS on N channel MOSFET JingYang 2N7002KX ideal for load switching and DC DC converter circuits
Key Attributes
Model Number:
2N7002KX
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-50℃~+150℃
RDS(on):
3.5Ω@5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
50pF
Gate Charge(Qg):
3nC@10V
Mfr. Part #:
2N7002KX
Package:
SOT-23
Product Description
Product Overview
The 2N7002KX is an N-channel MOSFET in an SOT-23 package, designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(on), rugged reliability, and high saturation current capability. This device is ESD protected and suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: JY Electronics (implied by website)
- Package: SOT-23
- Marking: NJ, 72K, 7002
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250A |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS=60V,VGS=0V |
| Gate-Body Leakage Current | IGSS | 500 | nA | VGS=10V,VDS=0V |
| Gate Threshold Voltage | VGS(th) | 1 - 2.5 | V | VDS=VGS,ID=250A |
| Drain-Source On-State Resistance | RDS(ON) | 2 - 3 | VGS=10V, ID=0.3A | |
| Drain-Source On-State Resistance | RDS(ON) | 2.1 - 3.5 | VGS=5V, ID=0.3A | |
| Input Capacitance | Ciss | 21 | pF | VDS=25V,VGS=0V, f=1.0MHz |
| Output Capacitance | Coss | 11 | pF | VDS=25V,VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | 4 | pF | VDS=25V,VGS=0V, f=1.0MHz |
| Turn-on Delay Time | td(on) | 10 | nS | VDD=30V,ID=0.2A, VGS=10V,RG=10 |
| Turn-on Rise Time | tr | 50 | nS | VDD=30V,ID=0.2A, VGS=10V,RG=10 |
| Turn-Off Delay Time | td(off) | 17 | nS | VDD=30V,ID=0.2A, VGS=10V,RG=10 |
| Turn-Off Fall Time | tf | 10 | nS | VDD=30V,ID=0.2A, VGS=10V,RG=10 |
| Total Gate Charge | Qg | 1.7 | nC | VDS=10V,ID=0.3A, VGS=4.5V |
| Gate-Source Charge | Qgs | 0.8 | nC | VDS=10V,ID=0.3A, VGS=4.5V |
| Gate-Drain Charge | Qgd | 0.8 | nC | VDS=10V,ID=0.3A, VGS=4.5V |
| Forward on Voltage | VSD | 0.87 - 1.2 | V | VGS=0V,IS=0.2A |
| Continuous Drain Current | ID | 0.3 | A | TA=25 |
| Continuous Drain Current | ID | 0.19 | A | TA=100 |
| Drain Current-Pulsed | IDM | 0.8 | A | |
| Maximum Power Dissipation | PD | 0.35 | W | TA=25 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -50 To 150 | ||
| Gate-Source Voltage | VGS | 20 | V |
2410122027_JingYang-2N7002KX_C3038094.pdf
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