Low RDSon P channel MOSFET for portable device power management featuring JingYang JY2305X technology
Key Attributes
Model Number:
JY2305X
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.2A
RDS(on):
65mΩ@4.5V,4.2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
500mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
126pF@15V
Number:
1 P-Channel
Output Capacitance(Coss):
167pF
Pd - Power Dissipation:
1.38W
Input Capacitance(Ciss):
740pF@15V
Gate Charge(Qg):
10.6nC@4.5V
Mfr. Part #:
JY2305X
Package:
SOT-23
Product Description
Product Overview
These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordless telephones. Features include low RDS(on) for higher efficiency and extended battery life, low thermal impedance copper leadframe SOT-23 for space saving, fast switching speed, and high performance trench technology.
Product Attributes
- Brand: JY (implied by www.jy-electronics.com.cn)
- Package: SOT-23
- Certifications: RoHS, Pb-free, Halogen free compliant, MSL-3 Level
- Origin: China (implied by www.jy-electronics.com.cn)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| P-Channel 20-V (D-S) MOSFET Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TA=25oC | -4.2 | A | ||
| Continuous Drain Current | ID | TA=70oC | -3.4 | A | ||
| Pulsed Drain Current | IDM | b | -10 | A | ||
| Power Dissipation | PD | TA=25oC | 1.38 | W | ||
| Linear Derating Factor | 0.01 | W/OC | ||||
| Operation Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | OC | ||
| Maximum Junction-to-Ambient Thermal Resistance | RJA | a | 90 | oC/W | ||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 250uA | -0.5 | V | ||
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS =12V | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS = -20 V, VGS = 0 V TJ = 25oC | -1 | uA | ||
| Drain-Source Leakage Current | IDSS | VDS = -16 V, VGS = 0 V, TJ = 55oC | -10 | uA | ||
| Drain-Source On-Resistance | RDS(on) | VGS = -10 V, ID = -4.5 A | 53 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS = -4.5 V, ID = -4.2 A | 65 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS = -2.5 V, ID = -2.0 A | 100 | m | ||
| Forward Transconductance | gfs | VDS = -5.0V, ID = -2.8A | 9 | S | ||
| Diode Forward On Voltage | VSD | IS = -1.2 A, VGS = 0 V | -1.2 | V | ||
| Reverse Recovery Time | Trr | IS=-4.2A, VGS=0V dI/dt=100A/us | 27.7 | ns | ||
| Reverse Recovery Charge | Qrr | 22 | nC | |||
| Total Gate Charge | Qg | VDS = -16V, VGS = -4.5V ID = -4.2A | 10.6 | nC | ||
| Gate-Source Charge | Qgs | 2.32 | nC | |||
| Gate-Drain Charge | Qg d | 3.68 | nC | |||
| Turn-On Delay Time | td(on) | VDS=-15V, RD=3.6, ID=-4.2A RG = 6, VGS = -10V | 5.9 | ns | ||
| Turn-On Rise Time | tr | 3.6 | ns | |||
| Turn-Off Delay Time | td(off) | 32.4 | ns | |||
| Turn-Off Fall Time | tf | 2.6 | ns | |||
| Input Capacitance | Ciss | VGS=0V,VDS=-15V,f =1.0MHz | 740 | pF | ||
| Output Capacitance | Coss | 167 | pF | |||
| Reverse Transfer Capacitance | Crss | 126 | pF |
2405091034_JingYang-JY2305X_C5307997.pdf
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