AEC Q101 qualified diode JSCJ AD-1SS357 plastic encapsulated Schottky barrier diode for power supply

Key Attributes
Model Number: AD-1SS357
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@40V
Non-Repetitive Peak Forward Surge Current:
1A
Voltage - DC Reverse (Vr) (Max):
40V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - Forward(Vf@If):
600mV@100mA
Current - Rectified:
100mA
Mfr. Part #:
AD-1SS357
Package:
SOD-323
Product Description

Product Overview

The AD-1SS357 is a plastic-encapsulated Schottky barrier diode designed for low current rectification. It features low voltage, low inductance, and is suitable for power supply applications. This diode is AEC-Q101 qualified.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
  • Product Code: AD-1SS357
  • Certifications: AEC-Q101 qualified
  • Marking: S31 (Device code), marking bar indicates the cathode

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Peak reverse voltageVRM45V
DC blocking voltageVR40V
Mean rectifying currentIO100mA
Non-repetitive peak forward surge currentIFSM@ t = 8.3ms1A
Power dissipationPD200mW
Thermal resistance from junction to ambientRJA1)500C/W
Operating junction temperature rangeTj-40125C
Storage temperature rangeTstg-55150C
Forward voltageVF1IF = 1mA0.35V
Forward voltageVF2IF = 10mA0.45V
Forward voltageVF3IF = 100mA0.60V
Reverse currentIRVR = 40V5A
Capacitance between terminalsCTVR = 0V, f = 1MHz25pF

1) Measured with the device mounted on 1 inch2 FR-4 board with 1oz. single-side copper, in a still air environment with Ta = 25.


2410121931_JSCJ-AD-1SS357_C2975664.pdf

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