N Channel MOSFET transistor JingYang TNM01K20FX for power switching and charging circuit efficiency

Key Attributes
Model Number: TNM01K20FX
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+155℃
RDS(on):
230mΩ@4.5V,0.55A
Gate Threshold Voltage (Vgs(th)):
1.1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Input Capacitance(Ciss):
43pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
2nC@4.5V
Mfr. Part #:
TNM01K20FX
Package:
SOT-523
Product Description

Product Overview

The TNM01K20FX is an N-Channel enhancement mode MOSFET transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits.

Product Attributes

  • Brand: Not Specified
  • Origin: Not Specified
  • Material: Not Specified
  • Color: Not Specified
  • Certifications: Not Specified

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Drain-Source Breakdown VoltageV(BR)DSSVGS=0VID=250uA20----V
Zero Gate Voltage Drain CurrentIDSSVDS=16VVGS=0V----1uA
Gate Threshold VoltageVGS(TH)VDS=VGSIDS=250uA0.45--1.1V
Gate Leakage CurrentIGSSVGS=10VVDS=0V----10uA
Drain-Source On-state ResistanceRDS(on)VGS=4.5VID=0.55A--190230m
VGS=2.5VID=0.45A--234305m
VGS=1.8VID=0.35A--303455m
Total Gate ChargeQgVGS=4.5VVDS=10VID=1A--2--nC
Gate- Source ChargeQgs----0.3--nC
Gate- Drain ChargeQgd----0.3--nC
Input CapacitanceCissVGS=0VVDS=10Vf=1MHZ--43--pF
Output CapacitanceCoss----9--pF
Reverse Transfer CapacitanceCrss----6--pF
Continuous Diode Forward CurrentISDVG=VD=0V , Force Current----3.5A
Diode Forward VoltageVSDISD=0.35AVGS=0V----1.1V
Reverse Recovery TimetrrIF = 1A di/dt = 100 A/s--9--nS
Reverse Recovery ChargeQrr----1--nC

2409302231_JingYang-TNM01K20FX_C5156709.pdf

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