High cell density P channel MOSFET JingYang TPM3012V1SX ideal for load switch and power management
Key Attributes
Model Number:
TPM3012V1SX
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
5A
RDS(on):
32mΩ@4.5V,1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
116pF
Output Capacitance(Coss):
219pF
Input Capacitance(Ciss):
984pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
8nC@4.5V
Mfr. Part #:
TPM3012V1SX
Package:
SOT-23
Product Description
Product Overview
The TPM3012V1SX is a high cell density trenched P-channel MOSFET, offering excellent RDS(ON) and efficiency for most small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval.
Product Attributes
- Brand: JY Electronics (implied by website)
- Origin: China (implied by website)
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDSS | VGS=0VID=-250uA | -12 | -18 | V | |
| VDS=-12VVGS=0V | -- | -- | 1 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGSIDS=-250uA | -0.4 | -- | -1 | V |
| Gate Leakage Current | IGSS | VGS=12VVDS=0V | -- | -- | 100 | nA |
| Drain-Source On-state Resistance | RDS(on) | VGS=-4.5VID=-1A | -- | 23 | 32 | m |
| VGS=-2.5VID=-0.5A | -- | 35 | 50 | m | ||
| Forward Transconductance | gfs | ID=-2AVDS=-5V | -- | 6 | -- | S |
| Gate Resistance | Rg | VGS=0VVDS=0Vf=1MHZ | -- | 16 | 32 | |
| Total Gate Charge | Qg | -- | 8 | -- | nC | |
| Gate-Source Charge | Qgs | -- | 1.14 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 1.5 | -- | nC | |
| Turn-on Delay Time | td(on) | -- | 13.6 | -- | ns | |
| Turn-on Rise Time | tr | -- | 35 | -- | ns | |
| Turn-off Delay Time | td(off) | -- | 32 | -- | ns | |
| Turn-off Fall Time | tf | -- | 10 | -- | ns | |
| Input Capacitance | Ciss | VGS=0VVDS=-10Vf=1MHZ | -- | 984 | -- | pF |
| Output Capacitance | Coss | -- | 219 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 116 | -- | pF | |
| Continuous Source Current | IS | VG=VD=0V , Force Current | -- | -- | -4.6 | A |
| Pulsed Source Current | ISM | -- | -- | -16 | A | |
| Diode Forward Voltage | VSD | ISD=-1AVGS=0V | -- | -- | -1.2 | V |
| Drain-Source Voltage | VDSS | -12 | V | |||
| Gate Source Voltage | VGSS | 12 | V | |||
| Drain Current (Continuous) | ID | TA=25C | -5 | A | ||
| Drain Current (Continuous) | ID | TA=70C | -3.9 | A | ||
| Drain Current (Pulse) | IDM | -16 | A | |||
| Power Dissipation | PD | TA=25C | 1.5 | W | ||
| Operating Temperature/ Storage Temperature | TJ/TSTG | -55 | to | 150 | C | |
| Thermal Resistance, Junction-to-Ambient | RJA | 125 | C/W | |||
| Thermal Resistance Junction-Case | RJC | 82 | C/W |
2409302200_JingYang-TPM3012V1SX_C5364038.pdf
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