Surface Mount P Channel MOSFET JingYang TPM05K20CX Ideal for Load Switching and Portable Electronics
Key Attributes
Model Number:
TPM05K20CX
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
RDS(on):
600mΩ@2.5V,0.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 P-Channel
Input Capacitance(Ciss):
113pF
Output Capacitance(Coss):
15pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
TPM05K20CX
Package:
SOT-723
Product Description
Product Overview
The TPM05K20CX is a P-Channel MOSFET designed for surface mount applications. It features low RDS(on), operates at low logic level gate drive, and is suitable for load/power switching, interfacing, and logic switching. It is an ideal choice for battery management in ultra-small portable electronics.
Product Attributes
- Lead Free Product
- Surface Mount Package
Technical Specifications
| Symbol | Parameter | Condition | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | ±8 | V | |||
| ID | Continuous Drain Current (note 1) | -0.66 | A | |||
| IDM | Pulsed Drain Current (tp=10μs) | -1.2 | A | |||
| PD | Power Dissipation (note 1) | 150 | mW | |||
| RJA | Thermal Resistance from Junction to Ambient (note 1) | 833 | ℉/W | |||
| TJ | Junction Temperature | 150 | ℃ | |||
| TSTG | Storage Temperature | -55 | +150 | ℃ | ||
| TL | Lead Temperature for Soldering Purposes(1/8 from case for 10 s) | 260 | ℃ | |||
| V(BR)DSS | Drain-source breakdown voltage | VGS = 0V, ID =-250μA | -20 | V | ||
| IDSS | Zero gate voltage drain current | VDS =-16V,VGS = 0V | -1 | μA | ||
| IGSS | Gate-body leakage current | VGS =±8V, VDS = 0V | ±10 | μA | ||
| VGS(th) | Gate threshold voltage (note 2) | VDS =VGS, ID =-250μA | -0.4 | -0.7 | V | |
| VGS =-4.5V, ID =-0.5A | 465 | 560 | m℉ | |||
| RDS(on) | Drain-source on-resistance (note 2) | VGS =-2.5V, ID =-0.5A | 600 | 780 | m℉ | |
| VGS =-4.5V, ID =-0.5A | 465 | 560 | m℉ | |||
| gFS | Forward transconductance (note 2) | VDS =-10V, ID =-0.54A | 1.2 | S | ||
| VSD | Diode forward voltage | IS=-0.5A, VGS = 0V | -1.1 | V | ||
| Ciss | Input capacitance | VDS =-16V,VGS =0V,f =1MHz | 113 | 170 | pF | |
| Coss | Output capacitance | VDS =-16V,VGS =0V,f =1MHz | 15 | 25 | pF | |
| Crss | Reverse transfer capacitance | VDS =-16V,VGS =0V,f =1MHz | 9 | 15 | pF | |
| td(on) | Turn-on delay time (note 3) | VGS=-4.5V,VDS=-10V, ID =-200mA,RGEN=10℉ | 9 | ns | ||
| tr | Turn-on rise time (note 3) | VGS=-4.5V,VDS=-10V, ID =-200mA,RGEN=10℉ | 5.8 | ns | ||
| td(off) | Turn-off delay time (note3) | VGS=-4.5V,VDS=-10V, ID =-200mA,RGEN=10℉ | 32.7 | ns | ||
| tf | Turn-off fall time (note 3) | VGS=-4.5V,VDS=-10V, ID =-200mA,RGEN=10℉ | 20.3 | ns | ||
2405091033_JingYang-TPM05K20CX_C5307996.pdf
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