Power MOSFET Device JingYang JY3404X Featuring Low RDS ON and Suitable for Load Switch Applications
Key Attributes
Model Number:
JY3404X
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
21mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 N-channel
Output Capacitance(Coss):
125pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
560pF@15V
Gate Charge(Qg):
7nC@5V
Mfr. Part #:
JY3404X
Package:
SOT23-3L
Product Description
Product Overview
The N-Channel Trench Power MOSFET utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is ideal for load switch and PWM applications, offering high power and current handling capability. It is a lead-free product available in a surface mount package.
Product Attributes
- Brand: JY (implied by www.jy-electronics.com.cn)
- Origin: China (implied by www.jy-electronics.com.cn)
- Material: Lead-free product
- Certifications: Lead-free product acquired
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
| VDS | Drain-Source Voltage (VGS=0V | 30 | V | ||
| VGS | Gate-Source Voltage (VDS=0V) | 20 | V | ||
| ID | Drain Current-Continuous | 5.8 | A | ||
| IDM (pluse) | Drain Current-Continuous@ Current-Pulsed (Note 1) | 30 | A | ||
| PD | Maximum Power Dissipation | 1.5 | W | ||
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 | 150 | ||
| RJA | Thermal Resistance, Junction-to-Ambient | 85 | /W | ||
| BVDSS | Drain-Source Breakdown Voltage VGS=0V ID=250A | 30 | 34 | V | |
| IDSS | Zero Gate Voltage Drain Current VDS=30V,VGS=0V | 1 | A | ||
| IGSS | Gate-Body Leakage Current VGS=20V,VDS=0V | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage VDS=VGS,ID=250A | 1.2 | 1.6 | 2.4 | V |
| gFS | Forward Transconductance VDS=5V,ID=5A | 3 | 5.8 | S | |
| RDS(ON) | Drain-Source On-State Resistance VGS=10V, ID=5.8A | 21 | 30 | m | |
| RDS(ON) | Drain-Source On-State Resistance VGS=4.5V, ID=2.9A | 32 | 42 | m | |
| Ciss | Input Capacitance VDS=15V,VGS=0V, f=1.0MHz | 560 | pF | ||
| Coss | Output Capacitance | 125 | pF | ||
| Crss | Reverse Transfer Capacitance | 90 | pF | ||
| td(on) | Turn-on Delay Time VDD=15V,ID=5.5A,RL=15 VGS=10V,RG=2.5 | 10 | nS | ||
| tr | Turn-on Rise Time | 4 | nS | ||
| td(off) | Turn-Off Delay Time | 27 | nS | ||
| tf | Turn-Off Fall Time | 5 | nS | ||
| Qg | Total Gate Charge VDS=10V,ID=3.6A, VGS=5V | 7 | nC | ||
| Qgs | Gate-Source Charge | 1.5 | nC | ||
| Qgd | Gate-Drain Charge | 3 | nC | ||
| ISD | Source-Drain Current(Body Diode) | 5.8 | A | ||
| VSD | Forward on Voltage(Note 1) VGS=0V,IS=1A | 0.78 | 1 | V |
2405091034_JingYang-JY3404X_C5380424.pdf
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