Switching N Channel Trench MOSFET JingYang SI2302 Ideal for Power Management and Battery Protection
Key Attributes
Model Number:
SI2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.9A
RDS(on):
350mΩ@1.2V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
56pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
480pF@10V
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
SI2302
Package:
SOT-23
Product Description
Product Overview
The N-Channel Trench Power MOSFET utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is ideal for battery protection and other switching applications, offering high power and current handling capabilities.
Product Attributes
- Lead-free product acquired
Technical Specifications
| Parameter | Value | Unit | Conditions |
| VDS | 20 | V | VGS=0V |
| VGS | ±12 | V | VDS=0V |
| ID (Continuous) | 2.9 | A | |
| IDM (Pulsed) | 10 | A | Current-Pulsed (Note 1) |
| PD (Max Power Dissipation) | 1 | W | |
| TJ, TSTG (Operating & Storage Temp) | -55 To 150 | ||
| RθJA (Thermal Resistance) | 125 | /W | Junction-to-Ambient |
| BVDSS (Drain-Source Breakdown Voltage) | 20 | V | VGS=0V, ID=250µA |
| IDSS (Zero Gate Voltage Drain Current) | 1 | µA | VDS=20V,VGS=0V |
| IGSS (Gate-Body Leakage Current) | ±100 | nA | VGS=±12V,VDS=0V |
| VGS(th) (Gate Threshold Voltage) | 0.5 - 1.2 | V | VDS=VGS,ID=250µA |
| gFS (Forward Transconductance) | 4 - 8 | S | VDS=5V,ID=2.9A |
| RDS(ON) (Drain-Source On-State Resistance) | 26 - 40 | mΩ | VGS=4.5V, ID=2.9A |
| RDS(ON) | 36 - 55 | mΩ | VGS=2.5V, ID=2A |
| RDS(ON) | 150 - 350 | mΩ | VGS=1.2V, ID=0.25A |
| Ciss (Input Capacitance) | 480 | pF | VDS=10V,VGS=0V, f=1.0MHz |
| Coss (Output Capacitance) | 86 | pF | |
| Crss (Reverse Transfer Capacitance) | 56 | pF | |
| td(on) (Turn-on Delay Time) | 11 | nS | VDD=10V,ID=2.9A,RL=2.8Ω, VGS=4.5V,RG=6Ω |
| tr (Turn-on Rise Time) | 52 | nS | |
| td(off) (Turn-Off Delay Time) | 17 | nS | |
| tf (Turn-Off Fall Time) | 10 | nS | |
| Qg (Total Gate Charge) | 4 | nC | VDS=10V,ID=2.9A, VGS=4.5V |
| Qgs (Gate-Source Charge) | 0.7 | nC | |
| Qgd (Gate-Drain Charge) | 1.2 | nC | |
| ISD (Source-Drain Current) | 2.9 | A | Body Diode |
| VSD (Forward on Voltage) | 0.75 - 1 | V | VGS=0V,IS=2.9A (Note 1) |
2406271402_JingYang-SI2302_C3038095.pdf
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