Ultra Low On Resistance 30V P Channel MOSFET JingYang 9435 for Power Management in Portable Equipment
Key Attributes
Model Number:
9435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
P-Channel
Number:
1 P-Channel
Mfr. Part #:
9435
Package:
SOP-8
Product Description
Product Overview
This 30V P-Channel Power MOSFET features a high-density design with ultra-low On-Resistance, making it suitable for power management in notebook computers, portable equipment, and battery-powered systems. It offers reliable and rugged performance.
Product Attributes
- Brand: TITAN MICRO
- Origin: www.jy-electronics.com.cn
- Package: SOP8
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250A | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=-24V, VGS=0V | -1 | A | ||
| IDSS | Zero Gate Voltage Drain Current | TA=85C | -30 | A | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | -1. | -1.5 | -3.0 | V |
| IGSS | Gate Leakage Current | VGS=20V, VDS=0V | 100 | nA | ||
| RDS(ON) | Drain-Source On-state Resistance | VGS=-10V, IDS=-5.3A | 55 | 60 | m | |
| RDS(ON) | Drain-Source On-state Resistance | VGS=-4.5V, IDS=-4.2A | 80 | 95 | m | |
| VSD | Diode Forward Voltage | ISD=-1.7A , VGS=0V | -0.7 | -1.3 | V | |
| VDSS | Drain-Source Voltage | -30 | V | |||
| VGSS | Gate-Source Voltage | 20 | ||||
| ID | Continue Drain Current | -5.3 | A | |||
| IDM | Pulsed Drain Current | -30 | A | |||
| IS | Diode Continuous Forward Current | -2 | A | |||
| TJ | Maximum Junction Temperature | 150 | C | |||
| TSTG | Storage Temperature Range | -55 | 150 | C | ||
| RJA | Thermal Resistance-Junction to Ambient | 62.5 | C/W |
2406271402_JingYang-9435_C5380425.pdf
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