N Channel MOSFET JingYang BSS138 Designed for Logic Level Control in Various Electronic Applications
Key Attributes
Model Number:
BSS138
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
220mA
Operating Temperature -:
-
RDS(on):
6Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Output Capacitance(Coss):
13pF
Input Capacitance(Ciss):
27pF
Pd - Power Dissipation:
350mW
Mfr. Part #:
BSS138
Package:
SOT-23
Product Description
Product Overview
The BSS138 is a 50V N-Channel MOSFET featuring a high-density cell design for extremely low RDS(on). It offers a rugged and reliable performance, making it suitable for direct logic-level interface with TTL/CMOS drivers. Applications include driving relays, solenoids, lamps, hammers, displays, memories, transistors, and in battery-operated systems and solid-state relays.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off characteristics | V(BR)DSS | VGS = 0V, ID =250A | 50 | V | ||
| IGSS | VDS =0V, VGS =20V | 100 | nA | |||
| IDSS | VDS =50V, VGS =0V | 0.5 | A | |||
| On characteristics | VGS(th) | VDS =VGS, ID =1mA | 0.80 | 1.50 | V | |
| RDS(on) | VGS =10V, ID =0.22A | 3.50 | ||||
| VGS =4.5V, ID =0.22A | 6 | |||||
| Forward transconductance | gFS | VDS =10V, ID =0.22A | 0.12 | S | ||
| Dynamic characteristics | Ciss | VDS =25V,VGS =0V, f=1MHz | 27 | pF | ||
| Coss | 13 | |||||
| Crss | 6 | |||||
| Switching characteristics | td(on) | VDD=30V, VDS=10V, ID =0.29A,RGEN=6 | 5 | ns | ||
| tr | 18 | |||||
| td(off) | 36 | |||||
| tf | 14 | |||||
| Body diode characteristics | VSD | IS=0.44A, VGS = 0V | 1.4 | V |
2406141117_JingYang-BSS138_C22459279.pdf
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