Low Voltage Schottky Diode JSCJ BAS70W-06 Plastic Encapsulated SOT-323 Package High Switching Speed
Key Attributes
Model Number:
BAS70W-06
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100mA
Reverse Leakage Current (Ir):
100nA@50V
Voltage - DC Reverse (Vr) (Max):
70V
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
70mA
Mfr. Part #:
BAS70W-06
Package:
SOT-323
Product Description
Product Overview
The BAS70W series are Schottky barrier diodes from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, housed in a SOT-323 plastic-encapsulated package. These diodes feature low turn-on voltage and fast switching speeds, making them suitable for various electronic applications. Lead-free versions are also available.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Series: BAS70W/-04/-05/-06
- Package Type: SOT-323
- Material: Plastic-Encapsulate
- Diode Type: Schottky Barrier Diode
- Lead Free: Available
- Markings: BAS70W (K73), BAS70W-04 (K74), BAS70W-05 (K75), BAS70W-06 (K76)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| DC Voltage | VR | 70 | V | ||
| Forward Continuous Current | IF | 70 | mA | ||
| Power Dissipation | PD | @Ta=25 | 200 | mW | |
| Junction Temperature | TJ | 125 | |||
| Storage Temperature | Tstg | -55 | +150 | ||
| Non-Repetitive Peak Forward Surge Current | IFSM | @ t = 8.3ms | 100 | mA | |
| Reverse breakdown voltage | V(BR) | IR= 10A | 70 | V | |
| Reverse voltage leakage current | IR | VR=50V | 100 | nA | |
| Forward voltage | VF | IF=1mA | 410 | mV | |
| Forward voltage | VF | IF=15mA | 1000 | mV | |
| Diode capacitance | CD | VR=0V,f=1MHz | 2 | pF | |
| Reveres recovery time | trr | IF=IR=10mA,Irr=0.1xIR, RL=100 | 5 | ns | |
| Thermal Resistance from Junction to Ambient | RJA | 500 | /W |
2410121238_JSCJ-BAS70W-06_C77311.pdf
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