30 Volt N Channel MOSFET designed for low resistance and fast switching JingYang TNM2K30K BIX device
Key Attributes
Model Number:
TNM2K30K-BIX
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2Ω@1.8V,200mA
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Input Capacitance(Ciss):
42pF
Pd - Power Dissipation:
350mW
Mfr. Part #:
TNM2K30K-BIX
Package:
SOT-23
Product Description
Product Overview
The TNM2K30K-BI is an N-Channel 30-V (D-S) MOSFET designed for low on-resistance and fast switching speeds. Its low voltage drive capability makes it ideal for portable equipment and easily designed drive circuits. This device is also suitable for interfacing and switching applications and can be easily paralleled.
Product Attributes
- Brand: JY Electronics
- Model: TNM2K30K-BI
- Marking: 3N2K
- Origin: China
- Website: www.jy-electronics.com.cn
- Contact: service@jy-electronics.com.cn
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | VDS | VGS = 0V, ID = 250A | 30 | V | ||
| IDSS | VDS =28V,VGS = 0V | 1 | A | |||
| IGSS | VGS =8V, VDS = 0V | 10 | A | |||
| VGS(th) | VDS = VGS , ID =250A | 0.6 | 1.0 | V | ||
| On Characteristics | RDS(on) | VGS = 1.2V, ID =100mA | 3 | |||
| RDS(on) | VGS =1.5V,ID =200mA | 2 | ||||
| RDS(on) | VGS =1.8V,ID =200mA | 2 | ||||
| RDS(on) | VGS =2.5V,ID =200mA | 1.6 | ||||
| RDS(on) | VGS =4.5V,ID =500mA | 1.2 | ||||
| Forward Transconductance | gFS | VDS =3V, ID = 10mA | 0.33 | mS | ||
| Dynamic Characteristics | Ciss | VDS =5V,VGS =0V,f =1MHz | 42 | pF | ||
| Coss | VDS =5V,VGS =0V,f =1MHz | 12.2 | pF | |||
| Crss | VDS =5V,VGS =0V,f =1MHz | 8 | pF | |||
| Switching Characteristics | td(on) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 15 | ns | ||
| tr | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 35 | ns | |||
| td(off) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 70 | ns | |||
| tf | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 70 | ns | |||
| Maximum Ratings | VDS | 30 | V | |||
| VGS | 12 | V | ||||
| Power Dissipation | PD | Ta = 25C | 0.35 | W | ||
| Continuous Drain Current | ID | Ta = 25C | 0.3 | A | ||
| Thermal Resistance | RJA | Junction-to-Ambient | 357 | /W | ||
| Operation Temperature | TJ,Tstg | -55 | +150 |
2303300930_JingYang-TNM2K30K-BIX_C5380430.pdf
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