Low Gate Charge Power MOSFET JingYang TNM03K100KX Featuring N Channel Enhancement Mode and SOT23 Package
Key Attributes
Model Number:
TNM03K100KX
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+175℃
RDS(on):
240mΩ@10V,2A
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
1 N-channel
Output Capacitance(Coss):
22pF
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
190pF
Gate Charge(Qg):
5.2nC@10V
Mfr. Part #:
TNM03K100KX
Package:
SOT-23
Product Description
Product Overview
The TNM03K100K is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications. The device is packaged in a RoHS-compliant SOT23 package.
Product Attributes
- Brand: JY Electronics
- Origin: China
- Certifications: RoHS
Technical Specifications
| Part Number | Type | VDS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | Package |
| TNM03K100KX | N-Channel Enhancement Mode Power MOSFET | 100 | 2 | ≤240 | SOT23 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0VID=250uA | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100VVGS=0V | -- | -- | 1 | uA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGSIDS=250uA | 1.2 | -- | 2.5 | V |
| Gate Leakage Current | IGSS | VGS=20VVDS=0V | -- | -- | ±100 | nA |
| Drain-Source On-state Resistance | RDS(on) | VGS=10VID=2A | -- | -- | 240 | m |
| Forward Transconductance | gfs | ISD=1AVDS=5V | 1 | -- | -- | S |
| Total Gate Charge | Qg | VGS=10VVDD=50VID=1.3A | -- | 5.2 | -- | nC |
| Gate- Source Charge | Qgs | VGS=10VVDD=50VID=1.3A | -- | 0.75 | -- | nC |
| Gate- Drain Charge | Qgd | VGS=10VVDD=50VID=1.3A | -- | 1.4 | -- | nC |
| Turn-on Delay Time | td(on) | VGS=10VVDD=50VID=1.3A RL=39RGEN=1 | -- | 6 | -- | ns |
| Turn-on Rise Time | tr | VGS=10VVDD=50VID=1.3A RL=39RGEN=1 | -- | 10 | -- | ns |
| Turn-off Delay Time | td(off) | VGS=10VVDD=50VID=1.3A RL=39RGEN=1 | -- | 10 | -- | ns |
| Turn-off Fall Time | tf | VGS=10VVDD=50VID=1.3A RL=39RGEN=1 | -- | 6 | -- | ns |
| Input Capacitance | Ciss | VGS=0VVDS=50Vf=1MHZ | -- | 190 | -- | pF |
| Output Capacitance | Coss | VGS=0VVDS=50Vf=1MHZ | -- | 22 | -- | pF |
| Reverse Transfer Capacitance | Crss | VGS=0VVDS=50Vf=1MHZ | -- | 13 | -- | pF |
| Parameter | Symbol | Ratings | Unit | |||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate Source Voltage | VGSS | ±20 | V | |||
| Drain Current (Continuous) | ID *AC | 2 | A | |||
| Drain Current (Pulse) | IDM *B | 5 | A | |||
| Power Dissipation | PD | 1.25 | W | |||
| Operating Temperature/ Storage Temperature | TJ/TSTG | -55~175 | C | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 100 | C/W | |||
| Continuous Diode Forward Current | IS | -- | 2 | A | ||
| Diode Forward Voltage | VSD | ISD=1.3AVGS=0V | -- | -- | 1.2 | V |
Ordering Information:
| Part Number | Working Voltage | Quantity Per Reel | Reel Size |
| TNM03K100KX | 100V | 3,000 | 7 Inch |
2409302300_JingYang-TNM03K100KX_C5156708.pdf
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