silicon epitaxial planar transistor JKSEMI MMBT3904 NPN type with operation in general applications
Key Attributes
Model Number:
MMBT3904
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Number:
1 NPN
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description
Product Overview
Silicon Epitaxial Planar Transistor (NPN) in SOT-23 package. Features high collector current, complementary to MMBT3906, and excellent HFE linearity. Suitable for general purpose applications.
Product Attributes
- Brand: jksemi
- Type: MMBT3904
- Marking: 1AM
- Origin: Not specified
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=10uA, IE=0 | 60 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 40 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE=10uA, IC=0 | 6 | V | |
| Collector cut-off current | ICEX | VCE=30V, VEB(off)=3V | 50 | nA | |
| Collector cut-off current | ICBO | VCB=60V, IE=0 | 100 | nA | |
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 100 | nA | |
| DC current gain | hFE(1) | VCE=1V, IC=10mA | 100 | 300 | |
| hFE(2) | VCE=1V, IC=50mA | 60 | |||
| hFE(3) | VCE=1V, IC=100mA | 30 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=50mA, IB=5mA | 0.30 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=50mA, IB=5mA | 0.95 | V | |
| Transition frequency | f T | VCE=20V, IC=10mA,f=100MHz | 300 | MHz | |
| Delay time | td | VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA | 35 | nS | |
| Rise time | tr | VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA | 35 | nS | |
| Storage time | ts | VCC=3V, IC=10mA, IB1=IB2=1mA | 200 | nS | |
| Fall time | tf | VCC=3V, IC=10mA, IB1=IB2=1mA | 50 | nS |
Absolute Maximum Ratings
| Symbol | Parameter | Value | Units |
| V CBO | Collector-Base Voltage | 60 | V |
| V CEO | Collector-Emitter Voltage | 40 | V |
| V EBO | Emitter-Base Voltage | 6 | V |
| I C | Collector Current -Continuous | 200 | mA |
| P C | Collector Dissipation | 200 | mW |
| Tj,T stg | Junction and Storage Temperature | -55~150 |
2409302232_JKSEMI-MMBT3904_C2972765.pdf
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