High Density Cell Structure N Channel MOSFET JingYang 2N7002KDWX with Low RDS On and ESD Protection
Key Attributes
Model Number:
2N7002KDWX
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
RDS(on):
1.3Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
2N7002KDWX
Package:
SOT363
Product Description
Product Overview
The 2N7002KDWX is a 60V N-Channel MOSFET designed with a high-density cell structure for low on-resistance (RDS(on)). It functions as a voltage-controlled small signal switch, offering ruggedness, reliability, and high saturation current capability. This MOSFET is ESD protected with a Gate HBM rating of 2.5KV and is suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: JY Electronics (implied by website)
- Model: 2N7002KDWX
- Channel Type: N-Channel
- Package: SOT-363
- ESD Protection: Gate HBM 2.5KV
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 340 | mA | |||
| Power Dissipation | PD | (1) | 150 | mW | ||
| Thermal Resistance from Junction to Ambient | RθJA | (1) | 833 | ℃/W | ||
| Junction Temperature | TJ | 150 | ℃ | |||
| Storage Temperature | TSTG | -55 | +150 | ℃ | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =48V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±10 | µA | ||
| Gate threshold voltage* | VGS(th) | VDS =VGS, ID =250µA | 1 | 1.4 | 2.5 | V |
| Drain-source on-resistance* | RDS(on) | VGS =4.5V, ID =200mA | 1.3 | 3.5 | ℆ | |
| Drain-source on-resistance* | RDS(on) | VGS =10V, ID =300mA | 1.4 | 4 | ℆ | |
| Diode Forward Voltage | VSD | VGS=0V, IS=300mA | 1.5 | V | ||
| Recovered charge | Qr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µs | 30 | nC | ||
| Dynamic characteristics** | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 40 | pF | ||
| Output Capacitance | Coss | 30 | pF | |||
| Reverse Transfer Capacitance | Crss | 10 | pF | |||
| Switching Characteristics** | ||||||
| Turn-on delay time | td(on) | VGS=10V,VDD=50V,RG=50℆, RGS=50℆, RL=250℆ | 10 | ns | ||
| Turn-off delay time | td(off) | 15 | ns | |||
| Reverse recovery Time | tf | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µs | 30 | ns | ||
| GATE-SOURCE ZENER DIODE | ||||||
| Gate-Source Breakdown Voltage | BVGSO | Igs=±1mA (Open Drain) | ±21.5 | ±30 | V | |
2409302231_JingYang-2N7002KDWX_C7434074.pdf
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