Low Voltage Operation and Low Offset Voltage N Channel 20V 1.2A N MOSFET JingYang TNM01K20CX for Power Conversion
Key Attributes
Model Number:
TNM01K20CX
Product Custom Attributes
Pd - Power Dissipation:
250mW
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
900mA
RDS(on):
250mΩ@4.5V;300mΩ@2.5V;400mΩ@1.8V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Output Capacitance(Coss):
9pF
Input Capacitance(Ciss):
43pF
Gate Charge(Qg):
2nC@4.5V
Mfr. Part #:
TNM01K20CX
Package:
SOT-723
Product Description
Product Overview
This N-Channel 20V, 1.2A N-MOSFET, designed with TrenchFET Power MOSFET technology, offers excellent performance for high-speed and low-voltage applications. It features low on-resistance, a low threshold voltage, and gate-source ESD protection, making it ideal for battery-operated systems, power supply converters, and driving various loads like relays, solenoids, lamps, and displays. Its low offset voltage and low-voltage operation capabilities ensure efficient performance even under low battery conditions.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: S- Prefix for Automotive and Other Applications Requiring (implied)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0VID=250uA | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=16VVGS=0V | -- | -- | 1 | uA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGSIDS=250uA | 0.5 | -- | 1.0 | V |
| Gate Leakage Current | IGSS | VGS=12VVDS=0V | -- | -- | 10 | uA |
| Drain-Source On-state Resistance | RDS(on) | VGS=4.5VID=0.5A | -- | 250 | 400 | m |
| VGS=2.5VID=0.5A | -- | 300 | 500 | m | ||
| VGS=1.8VID=0.35A | -- | 400 | 650 | m | ||
| Switching Characteristics | VGS=4.5VVDS=10VID=1A | -- | 2 | -- | nC | |
| VGS=4.5VVDS=10VRGEN=6ID=2A | -- | 1.2 | -- | ns | ||
| VGS=4.5VVDS=10VRGEN=6ID=2A | -- | 25 | -- | ns | ||
| Capacitance | VGS=0VVDS=10Vf=1MHZ | -- | 43 | -- | pF | |
| -- | 9 | -- | pF | |||
| -- | 6 | -- | pF | |||
| Continuous Diode Forward Current | ISD | VG=VD=0V , Force Current | -- | -- | 3.5 | A |
| Diode Forward Voltage | VSD | ISD=0.5AVGS=0V | -- | -- | 1.3 | V |
| Reverse Recovery Time | trr | IF = 1A di/dt = 100 A/s | -- | 9 | -- | nS |
2504101957_JingYang-TNM01K20CX_C5307986.pdf
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