Low forward voltage drop Schottky diode JSCJ SD101AWS S1 with fast switching and low leakage current
Key Attributes
Model Number:
SD101AWS S1
Product Custom Attributes
Reverse Leakage Current (Ir):
200nA@50V
Non-Repetitive Peak Forward Surge Current:
2A
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
15mA
Mfr. Part #:
SD101AWS S1
Package:
SOD-323
Product Description
Product Overview
The SD101AWS is a Schottky Barrier Diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, featuring low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time, and very low reverse capacitance. It is suitable for applications requiring fast switching and low leakage.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Type: SOD-323 Plastic-Encapsulated Diodes
- Marking: S1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Repetitive Peak Reverse Voltage | VRRM | 60 | V | |||
| Working Peak Reverse Voltage | VRWM | 60 | V | |||
| DC Blocking Voltage | VR | 60 | V | |||
| RMS reverse voltage | VR(RMS) | 42 | V | |||
| Forward Continuous Current | IFM | 15 | mA | |||
| Non-repetitive Peak Forward Surge Current | IFSM | @ t1s | 50 | mA | ||
| Non-repetitive Peak Forward Surge Current | IFSM | @t=10s | 2 | A | ||
| Power Dissipation | PD | 200 | mW | |||
| Thermal Resistance from Junction to Ambient | RJA | 500 | /W | |||
| Junction Temperature | Tj | 125 | ||||
| Storage Temperature | Tstg | -50 | +150 | |||
| Reverse voltage | V(BR) | IR=10A | 60 | V | ||
| Reverse current | IR | VR=50V | 0.2 | A | ||
| Forward voltage | VF | IF=1mA | 0.41 | V | ||
| Forward voltage | VF | IF=15mA | 1 | V | ||
| Total capacitance | Ctot | VR=0V,f=1MHz | 2 | pF | ||
| Reverse recovery time | trr | IF= IR=5mA, Irr=0.1IR, RL=100 | 1 | ns |
2410121637_JSCJ-SD101AWS-S1_C22640.pdf
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