General purpose switching diode JSCJ BAS16 A6 in plastic encapsulated SOT-23 package for electronics

Key Attributes
Model Number: BAS16 A6
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
6ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
Independent
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
BAS16 A6
Package:
SOT-23
Product Description

Product Overview

The BAS16 is a high-performance switching diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, housed in a SOT-23 plastic-encapsulated package. It features fast switching speed and is designed for general-purpose switching applications, offering high conductance.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Package: SOT-23
  • Material: Plastic-Encapsulate
  • Marking: A6

Technical Specifications

ParameterSymbolLimitUnitTest ConditionsMinMax
Non-Repetitive Peak Reverse VoltageVRM100V
Peak Repetitive Peak Reverse Voltage / Working Peak Reverse VoltageVRRM / VRWM75V
RMS Reverse VoltageVR(RMS)53V
DC Blocking VoltageVRV
Forward Continuous CurrentIFM300mA@Ta=25
Average Rectified Output CurrentIO150mA@Ta=25
Peak Forward Surge CurrentIFSM2.0 / 1.0A@t=1.0s / @t =1.0s
Power DissipationPD225mW@Ta=25
Thermal Resistance Junction to AmbientRJA556/W
Junction TemperatureTj150
Storage TemperatureTSTG-55~+150
Reverse breakdown voltageV(BR)VIR= 100A75
Reverse voltage leakage currentIRAVR=75V1
Forward voltageVFVIF=1mA0.715
Forward voltageVFVIF=10mA0.855
Forward voltageVFVIF=50mA1
Forward voltageVFVIF=150mA1.25
Diode capacitanceCDpFVR=0, f=1MHz2
Reveres recovery timetrrnsIF=IR=10mA,Irr=0.1IR, RL=1006

2410121532_JSCJ-BAS16-A6_C8489.pdf

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